SiC功率mosfet中激光诱导单事件效应的研究

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2025-04-03 DOI:10.1109/TED.2025.3552549

Haoming Wang;Chao Peng;Zhifeng Lei;Zhangang Zhang;Teng Ma;Yujuan He;Hong Zhang;Xiangli Zhong;Hongjia Song;Zhao Fu;Jinbin Wang;Xiaoping Ouyang

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引用次数: 0

摘要

本文研究了激光辐照SiC功率mosfet的单事件效应。在脉冲激光双光子吸收（TPA）条件下，观察到单事件烧坏（SEB）和漏电流增加现象。得到了不同偏置电压下SEE的能量阈值。提出了一种改进的等效线性能量传递（ELET）模型来关联SiC mosfet中激光诱导的SEE和重离子诱导的SEE。实验结果表明，当激光能量超过42 nJ时，改进模型的LET值与重离子实验的线性能量传递（LET）值之间的误差低至5%，显著提高了激光评价的精度。

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Study of Laser-Induced Single Event Effects in SiC Power MOSFETs

This article investigates the single event effects (SEEs) of SiC power MOSFETs by laser irradiation. The single event burnout (SEB) and leakage current increase phenomenon are observed under pulsed laser two-photon absorption (TPA) conditions. The energy threshold for SEE corresponding to different bias voltages is obtained. An improved equivalent linear energy transfer (ELET) model is proposed to correlate the laser-induced SEE and the heavy-ion-induced SEE in SiC MOSFETs. Experimental results show that when laser energy exceeds 42 nJ, the error between the ELET values from the improved model and linear energy transfer (LET) from heavy-ion experiments is as low as 5%, significantly enhancing the accuracy of laser evaluation.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.