用于近红外LED和光电探测器的新型双向p-i-n二极管的负电容

IF 4.6 2区物理与天体物理 Q1 OPTICS

Optics and Laser Technology Pub Date : 2025-05-16 DOI:10.1016/j.optlastec.2025.113207

Fahrettin Sarcan, Aydin Masoumi, Goksenin Kalyon, Ayse Erol

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引用次数: 0

摘要

在这项研究中，研究了基于GaInNAs/ ganas的双向多量子阱p-i-n结器件的负电容（NC）现象，该器件设计用于近红外电信应用的发光二极管（LED）和光电探测器。该器件采用分子束外延（MBE）生长，结构为9个GaInNAs/GaNAs量子阱，15个周期的GaAs/AlAs分布式Bragg反射器（DBR）为底镜。光致发光（PL）、电致发光（EL）和光谱光电流测量证实了器件在电信o波段内工作，发射和检测中心为1280 nm，半最大值（FWHM）窄全宽为65 nm。在正向偏置和反向偏置条件下均观察到NC电容。在正向偏压下观察到的NC效应归因于辐射重组，而在反向偏压下观察到的NC效应是由缺陷相关的载流子捕获和冲击电离机制驱动的。这些结果提供了多量子阱p-i-n结二极管结构中NC机制的详细理解。

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Negative capacitance in a novel bidirectional p-i-n diode for near-infrared LED and photodetector applications

In this study, the negative capacitance (NC) phenomena is investigated in a GaInNAs/GaNAs-based bidirectional multi-quantum well p-i-n junction device designed for both light-emitting diode (LED) and photodetector, for near-infrared telecom applications. The device was grown by molecular beam epitaxy (MBE) with a structure comprising nine GaInNAs/GaNAs quantum wells with 15 periods of GaAs/AlAs distributed Bragg reflector (DBR) as bottom mirror. Photoluminescence (PL), electroluminescence (EL), and spectral photocurrent measurements confirm device operation within the telecom O-band, with emission and detection centred at 1280 nm and a narrow full-width at half-maximum (FWHM) of 65 nm. The NC capacitance is observed in both the forward and the reverse bias conditions. The NC effect observed under forward bias is attributed to radiative recombination, while under reverse bias it is driven by defect-related carrier trapping and impact ionization mechanisms. These results provide a detailed understanding of NC mechanisms in multi quantum well p-i-n junctions diode structures.

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来源期刊

Optics and Laser Technology 物理-光学

CiteScore

8.50

自引率

10.00%

发文量

1060

审稿时长

3.4 months

期刊介绍： Optics & Laser Technology aims to provide a vehicle for the publication of a broad range of high quality research and review papers in those fields of scientific and engineering research appertaining to the development and application of the technology of optics and lasers. Papers describing original work in these areas are submitted to rigorous refereeing prior to acceptance for publication. The scope of Optics & Laser Technology encompasses, but is not restricted to, the following areas: •development in all types of lasers •developments in optoelectronic devices and photonics •developments in new photonics and optical concepts •developments in conventional optics, optical instruments and components •techniques of optical metrology, including interferometry and optical fibre sensors •LIDAR and other non-contact optical measurement techniques, including optical methods in heat and fluid flow •applications of lasers to materials processing, optical NDT display (including holography) and optical communication •research and development in the field of laser safety including studies of hazards resulting from the applications of lasers (laser safety, hazards of laser fume) •developments in optical computing and optical information processing •developments in new optical materials •developments in new optical characterization methods and techniques •developments in quantum optics •developments in light assisted micro and nanofabrication methods and techniques •developments in nanophotonics and biophotonics •developments in imaging processing and systems