{"title":"连续电流应力下InP/AlGaInAs激光二极管的负差分电阻","authors":"Zhengqun Xue , Bingkun Chi , Yuping Chen","doi":"10.1016/j.optlastec.2025.113196","DOIUrl":null,"url":null,"abstract":"<div><div>We investigate the negative differential resistance (NDR) in InP/AlGaInAs laser diodes under continuous current stress. Experiments conducted on 1550 nm distributed feedback (DFB) lasers reveal significant performance degradation as the devices approach or exhibit NDR. The primary mechanism underlying these changes is attributed to the initiation of intrinsic conduction in quantum well layers which has the highest operating temperatures, lowest doping levels, and narrowest bandgaps. This process leads to operating voltage saturation and reduction, as well as irreversible degradation of the active region. Following the onset of NDR, increased impurity and defect densities in the active region elevate the current that induced the NDR again. The similar phenomena were also observed in 1310 nm InP/AlGaInAs Fabry-Perot (FP) lasers. These findings provide crucial basis for further research and improvement in the reliability of lasers at high currents, as well as defining their safe operating current range.</div></div>","PeriodicalId":19511,"journal":{"name":"Optics and Laser Technology","volume":"190 ","pages":"Article 113196"},"PeriodicalIF":4.6000,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Negative differential resistance in InP/AlGaInAs laser diodes under continuous current stress\",\"authors\":\"Zhengqun Xue , Bingkun Chi , Yuping Chen\",\"doi\":\"10.1016/j.optlastec.2025.113196\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>We investigate the negative differential resistance (NDR) in InP/AlGaInAs laser diodes under continuous current stress. Experiments conducted on 1550 nm distributed feedback (DFB) lasers reveal significant performance degradation as the devices approach or exhibit NDR. The primary mechanism underlying these changes is attributed to the initiation of intrinsic conduction in quantum well layers which has the highest operating temperatures, lowest doping levels, and narrowest bandgaps. This process leads to operating voltage saturation and reduction, as well as irreversible degradation of the active region. Following the onset of NDR, increased impurity and defect densities in the active region elevate the current that induced the NDR again. The similar phenomena were also observed in 1310 nm InP/AlGaInAs Fabry-Perot (FP) lasers. These findings provide crucial basis for further research and improvement in the reliability of lasers at high currents, as well as defining their safe operating current range.</div></div>\",\"PeriodicalId\":19511,\"journal\":{\"name\":\"Optics and Laser Technology\",\"volume\":\"190 \",\"pages\":\"Article 113196\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2025-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optics and Laser Technology\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S003039922500787X\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optics and Laser Technology","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S003039922500787X","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
Negative differential resistance in InP/AlGaInAs laser diodes under continuous current stress
We investigate the negative differential resistance (NDR) in InP/AlGaInAs laser diodes under continuous current stress. Experiments conducted on 1550 nm distributed feedback (DFB) lasers reveal significant performance degradation as the devices approach or exhibit NDR. The primary mechanism underlying these changes is attributed to the initiation of intrinsic conduction in quantum well layers which has the highest operating temperatures, lowest doping levels, and narrowest bandgaps. This process leads to operating voltage saturation and reduction, as well as irreversible degradation of the active region. Following the onset of NDR, increased impurity and defect densities in the active region elevate the current that induced the NDR again. The similar phenomena were also observed in 1310 nm InP/AlGaInAs Fabry-Perot (FP) lasers. These findings provide crucial basis for further research and improvement in the reliability of lasers at high currents, as well as defining their safe operating current range.
期刊介绍:
Optics & Laser Technology aims to provide a vehicle for the publication of a broad range of high quality research and review papers in those fields of scientific and engineering research appertaining to the development and application of the technology of optics and lasers. Papers describing original work in these areas are submitted to rigorous refereeing prior to acceptance for publication.
The scope of Optics & Laser Technology encompasses, but is not restricted to, the following areas:
•development in all types of lasers
•developments in optoelectronic devices and photonics
•developments in new photonics and optical concepts
•developments in conventional optics, optical instruments and components
•techniques of optical metrology, including interferometry and optical fibre sensors
•LIDAR and other non-contact optical measurement techniques, including optical methods in heat and fluid flow
•applications of lasers to materials processing, optical NDT display (including holography) and optical communication
•research and development in the field of laser safety including studies of hazards resulting from the applications of lasers (laser safety, hazards of laser fume)
•developments in optical computing and optical information processing
•developments in new optical materials
•developments in new optical characterization methods and techniques
•developments in quantum optics
•developments in light assisted micro and nanofabrication methods and techniques
•developments in nanophotonics and biophotonics
•developments in imaging processing and systems