Yuxin Liu, Lei Song, Xiaofei Zhang, Ang Bian, Chengxi Zhang, Jun Dai
{"title":"绿色发光二极管用ch30 - peabr钝化准二维钙钛矿BA2Cs4Pb5Br16薄膜","authors":"Yuxin Liu, Lei Song, Xiaofei Zhang, Ang Bian, Chengxi Zhang, Jun Dai","doi":"10.1002/aelm.202500071","DOIUrl":null,"url":null,"abstract":"In this paper, the quasi-2D green perovskite BA<sub>2</sub>Cs<sub>4</sub>Pb<sub>5</sub>Br<sub>16</sub> film passivated by the CH<sub>3</sub>O-PEABr is reported to realize nonradiative defect suppressing. The passivated BA<sub>2</sub>Cs<sub>4</sub>Pb<sub>5</sub>Br<sub>16</sub> film has a large exciton binding energy (74.9 meV), which is conducive to efficient radiation recombination. Time-resolved photoluminescence and ultrafast transient absorption spectroscopy show that the carrier lifetime is effectively prolonged after CH<sub>3</sub>O-PEABr passivation, indicating photoluminescence enhancement is attributed to the nonradiative defect suppressing. Finally, an electroluminescent green light-emitting diodes device is fabricated based on the CH<sub>3</sub>O-PEABr-passivated BA<sub>2</sub>Cs<sub>4</sub>Pb<sub>5</sub>Br<sub>16</sub> thin film, the maximum external quantum efficiency can be 19.47%. The results indicate that the CH<sub>3</sub>O-PEABr passivated BA<sub>2</sub>Cs<sub>4</sub>Pb<sub>5</sub>Br<sub>16</sub> thin film can be a promising material for the high-performance green light-emitting diodes.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"51 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CH3O-PEABr Passivated Quasi-2D Perovskite BA2Cs4Pb5Br16 Thin Film for Green Light-Emitting Diodes\",\"authors\":\"Yuxin Liu, Lei Song, Xiaofei Zhang, Ang Bian, Chengxi Zhang, Jun Dai\",\"doi\":\"10.1002/aelm.202500071\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the quasi-2D green perovskite BA<sub>2</sub>Cs<sub>4</sub>Pb<sub>5</sub>Br<sub>16</sub> film passivated by the CH<sub>3</sub>O-PEABr is reported to realize nonradiative defect suppressing. The passivated BA<sub>2</sub>Cs<sub>4</sub>Pb<sub>5</sub>Br<sub>16</sub> film has a large exciton binding energy (74.9 meV), which is conducive to efficient radiation recombination. Time-resolved photoluminescence and ultrafast transient absorption spectroscopy show that the carrier lifetime is effectively prolonged after CH<sub>3</sub>O-PEABr passivation, indicating photoluminescence enhancement is attributed to the nonradiative defect suppressing. Finally, an electroluminescent green light-emitting diodes device is fabricated based on the CH<sub>3</sub>O-PEABr-passivated BA<sub>2</sub>Cs<sub>4</sub>Pb<sub>5</sub>Br<sub>16</sub> thin film, the maximum external quantum efficiency can be 19.47%. The results indicate that the CH<sub>3</sub>O-PEABr passivated BA<sub>2</sub>Cs<sub>4</sub>Pb<sub>5</sub>Br<sub>16</sub> thin film can be a promising material for the high-performance green light-emitting diodes.\",\"PeriodicalId\":110,\"journal\":{\"name\":\"Advanced Electronic Materials\",\"volume\":\"51 1\",\"pages\":\"\"},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2025-05-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/aelm.202500071\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202500071","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
CH3O-PEABr Passivated Quasi-2D Perovskite BA2Cs4Pb5Br16 Thin Film for Green Light-Emitting Diodes
In this paper, the quasi-2D green perovskite BA2Cs4Pb5Br16 film passivated by the CH3O-PEABr is reported to realize nonradiative defect suppressing. The passivated BA2Cs4Pb5Br16 film has a large exciton binding energy (74.9 meV), which is conducive to efficient radiation recombination. Time-resolved photoluminescence and ultrafast transient absorption spectroscopy show that the carrier lifetime is effectively prolonged after CH3O-PEABr passivation, indicating photoluminescence enhancement is attributed to the nonradiative defect suppressing. Finally, an electroluminescent green light-emitting diodes device is fabricated based on the CH3O-PEABr-passivated BA2Cs4Pb5Br16 thin film, the maximum external quantum efficiency can be 19.47%. The results indicate that the CH3O-PEABr passivated BA2Cs4Pb5Br16 thin film can be a promising material for the high-performance green light-emitting diodes.
期刊介绍:
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.