绿色发光二极管用ch30 - peabr钝化准二维钙钛矿BA2Cs4Pb5Br16薄膜

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Yuxin Liu, Lei Song, Xiaofei Zhang, Ang Bian, Chengxi Zhang, Jun Dai
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引用次数: 0

摘要

本文报道了ch30 - peabr钝化的准二维绿色钙钛矿BA2Cs4Pb5Br16薄膜实现了非辐射缺陷抑制。钝化后的BA2Cs4Pb5Br16薄膜具有较大的激子结合能(74.9 meV),有利于高效的辐射复合。时间分辨光致发光和超快瞬态吸收光谱表明,ch30 - peabr钝化后载流子寿命有效延长,表明光致发光增强是由于抑制了非辐射缺陷。最后,在ch30 - pebr钝化BA2Cs4Pb5Br16薄膜上制备了电致发光绿色发光二极管器件,最大外量子效率可达19.47%。结果表明,ch30 - peabr钝化BA2Cs4Pb5Br16薄膜是一种很有前途的高性能绿色发光二极管材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

CH3O-PEABr Passivated Quasi-2D Perovskite BA2Cs4Pb5Br16 Thin Film for Green Light-Emitting Diodes

CH3O-PEABr Passivated Quasi-2D Perovskite BA2Cs4Pb5Br16 Thin Film for Green Light-Emitting Diodes
In this paper, the quasi-2D green perovskite BA2Cs4Pb5Br16 film passivated by the CH3O-PEABr is reported to realize nonradiative defect suppressing. The passivated BA2Cs4Pb5Br16 film has a large exciton binding energy (74.9 meV), which is conducive to efficient radiation recombination. Time-resolved photoluminescence and ultrafast transient absorption spectroscopy show that the carrier lifetime is effectively prolonged after CH3O-PEABr passivation, indicating photoluminescence enhancement is attributed to the nonradiative defect suppressing. Finally, an electroluminescent green light-emitting diodes device is fabricated based on the CH3O-PEABr-passivated BA2Cs4Pb5Br16 thin film, the maximum external quantum efficiency can be 19.47%. The results indicate that the CH3O-PEABr passivated BA2Cs4Pb5Br16 thin film can be a promising material for the high-performance green light-emitting diodes.
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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