{"title":"W波段移相器和功率放大器电路和封装协同设计的三维相控阵发射机","authors":"Zhe Zhao;Dong-Xin Ni;Wang-Wen Xu;Yin-Shan Huang;Cheng-Rui Zhang;Liang Zhou","doi":"10.1109/TCPMT.2025.3553253","DOIUrl":null,"url":null,"abstract":"This study proposes the design, fabrication, and testing of a 3-D integrated transmitter operating at the W band. Detailed analyses of the performance variations before and after packaging of the phase shifter (PS) and power amplifier (PA) are provided, along with specific design processes. The circuit and packaging of the PS and PA are codesigned to maintain their performance and minimize proximity effects during 3-D integration at millimeter-wave frequencies. The PS achieves a −6.4-dB loss at 100GHz, with a phase root mean square (rms) error of 1.11° and a gain rms error of 0.855dB. The PA achieves a maximum gain of 19.5dB at 103GHz, with a bandwidth from 99.2 to 106.7GHz and a saturated output power of 13dBm. Both the PS and PA are individually packaged using proprietary silicon-based micro-electro-mechanical system (MEMS) through-silicon-trench technology and multilayer photosensitive composite film. Finally, a 3-D integration of the transmitter system is realized using microbumps based on 3-D transition structures.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 5","pages":"1060-1071"},"PeriodicalIF":3.0000,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 3-D Phased Array Transmitter With Circuit and Package Codesign of a Phase Shifter and a Power Amplifier at W Band\",\"authors\":\"Zhe Zhao;Dong-Xin Ni;Wang-Wen Xu;Yin-Shan Huang;Cheng-Rui Zhang;Liang Zhou\",\"doi\":\"10.1109/TCPMT.2025.3553253\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study proposes the design, fabrication, and testing of a 3-D integrated transmitter operating at the W band. Detailed analyses of the performance variations before and after packaging of the phase shifter (PS) and power amplifier (PA) are provided, along with specific design processes. The circuit and packaging of the PS and PA are codesigned to maintain their performance and minimize proximity effects during 3-D integration at millimeter-wave frequencies. The PS achieves a −6.4-dB loss at 100GHz, with a phase root mean square (rms) error of 1.11° and a gain rms error of 0.855dB. The PA achieves a maximum gain of 19.5dB at 103GHz, with a bandwidth from 99.2 to 106.7GHz and a saturated output power of 13dBm. Both the PS and PA are individually packaged using proprietary silicon-based micro-electro-mechanical system (MEMS) through-silicon-trench technology and multilayer photosensitive composite film. Finally, a 3-D integration of the transmitter system is realized using microbumps based on 3-D transition structures.\",\"PeriodicalId\":13085,\"journal\":{\"name\":\"IEEE Transactions on Components, Packaging and Manufacturing Technology\",\"volume\":\"15 5\",\"pages\":\"1060-1071\"},\"PeriodicalIF\":3.0000,\"publicationDate\":\"2025-03-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Components, Packaging and Manufacturing Technology\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10935644/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Components, Packaging and Manufacturing Technology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10935644/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 3-D Phased Array Transmitter With Circuit and Package Codesign of a Phase Shifter and a Power Amplifier at W Band
This study proposes the design, fabrication, and testing of a 3-D integrated transmitter operating at the W band. Detailed analyses of the performance variations before and after packaging of the phase shifter (PS) and power amplifier (PA) are provided, along with specific design processes. The circuit and packaging of the PS and PA are codesigned to maintain their performance and minimize proximity effects during 3-D integration at millimeter-wave frequencies. The PS achieves a −6.4-dB loss at 100GHz, with a phase root mean square (rms) error of 1.11° and a gain rms error of 0.855dB. The PA achieves a maximum gain of 19.5dB at 103GHz, with a bandwidth from 99.2 to 106.7GHz and a saturated output power of 13dBm. Both the PS and PA are individually packaged using proprietary silicon-based micro-electro-mechanical system (MEMS) through-silicon-trench technology and multilayer photosensitive composite film. Finally, a 3-D integration of the transmitter system is realized using microbumps based on 3-D transition structures.
期刊介绍:
IEEE Transactions on Components, Packaging, and Manufacturing Technology publishes research and application articles on modeling, design, building blocks, technical infrastructure, and analysis underpinning electronic, photonic and MEMS packaging, in addition to new developments in passive components, electrical contacts and connectors, thermal management, and device reliability; as well as the manufacture of electronics parts and assemblies, with broad coverage of design, factory modeling, assembly methods, quality, product robustness, and design-for-environment.