级联LWIR探测器InAs/InAsSb超晶格微带位置分析

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-04-24 DOI:10.1109/JEDS.2025.3563981

K. Murawski;K. Majkowycz;K. Michalczewski;J. Jureńczyk;Ł. Kubiszyn;T. Manyk;M. Kopytko;B. Seredyński;P. Martyniuk

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引用次数: 0

摘要

本文分析了在GaAs（001）衬底上通过分子束外延（MBE）生长的具有ii型超晶格（T2SLs）、无镓（Ga-free） InAs/InAsSb （xSb ${=}0.39$）吸收剂的长红外（LWIR）带间级联光电探测器（ICIP）的微带跃迁。基于光致发光（PL）和光谱响应（SR）测量的结果与应变和无应变结构的（$8\ × 8$哈密顿）k $\cdot $ p模型的理论计算相结合。测定了HH ${_{{1}}} \right tarrow $ C1、LH ${_{{1}}} \right tarrow $ C1、SO $\right tarrow $ C1和HH ${_{{1}}} \right tarrow $ C1的温度依赖性。它们的300 K能量分别为114 meV、195 meV、290 meV和380 meV。此外，还确定了Varshni参数。对于PL结果，在整个温度范围内观察到85 meV。值得注意的是，在低温下，在能隙（Eg）内分别发生了5 meV和14 meV的蓝移跃迁。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of InAs/InAsSb Superlattice Miniband Positions for a Cascade LWIR Detector

The paper presents an analysis of the miniband transitions of long- infrared (LWIR) interband cascade photodetectors (ICIP), with type-II superlattices (T2SLs), gallium-free (“Ga-free”) InAs/InAsSb (xSb

${=}0.39$

) absorber, grown by molecular beam epitaxy (MBE) on a GaAs (001) substrate. The results collected based on the photoluminescence (PL) and spectral response (SR) measurements were combined with theoretical calculations using the (

$8\times 8$

Hamiltonian) k

$\cdot $

p model for both strained and strain-free structure. The temperature dependence of HH

${_{{1}}} \rightarrow $

C1, LH

${_{{1}}} \rightarrow $

C1, SO

$\rightarrow $

C1 and HH

${_{{1}}} \rightarrow $

C1 was determined. Their respective 300 K energies were 114 meV, 195 meV, 290 meV and 380 meV, respectively. Moreover, the Varshni parameters were determined. For the PL results, 85 meV was observed across the entire temperature range. Remarkably, at cryogenic temperatures additional blue-shifted 5 meV and 14 meV transitions within the energy gap (Eg) occurred, respectively.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.