低温下FDSOI mosfet射频区的自热效应

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-04-21 DOI:10.1109/JEDS.2025.3562752

Hung-Chi Han;Edoardo Charbon;Christian Enz

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引用次数: 0

摘要

射频（RF）电路对量子比特操作至关重要，晶体管自热效应可能影响性能并可能改变量子态。本文首次提出了考虑3.3 K动态自热效应的FDSOI mosfet解析RF模型。参数提取涉及到解析计算和优化利用迭代加权最小二乘（IRLS）和蒙特卡罗方法。温升是通过捕获热阻和器件温度之间的相关性来估计的。这项工作为FDSOI射频性能建模和分析低温下的动态自热效应提供了一种方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Self-Heating Effects in RF Region of FDSOI MOSFETs at Cryogenic Temperatures

Radio-frequency (RF) circuits are crucial to qubit manipulation, for which transistor self-heating effects may influence performance and possibly change the quantum state. This paper presents an analytical RF model of FDSOI MOSFETs considering dynamic self-heating effects down to 3.3 K for the first time. Parameter extraction involves analytical calculation and optimization using the iteratively re-weighted least squares (IRLS) and Monte Carlo methods. The temperature rise is estimated by capturing the correlation between thermal resistance and device temperature. This work provides a method for modeling FDSOI RF performance and for analyzing dynamic self-heating effects at cryogenic temperatures.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.