掺杂BiFeO3中相变驱动的多铁性能增强：综述

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-05-06 DOI:10.1016/j.mssp.2025.109613

Subhash Sharma , Santhoshkumar Mahadevan , Kaushlendra Pandey , Parminder Singh , Sunil Chauhan , Manish Kumar , J.M. Siqueiros , O. Raymond Herrera

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引用次数: 0

摘要

在这篇综述文章中，我们探讨了过渡金属、稀土元素和非金属元素在A位和B位掺杂工程对BiFeO3 （BFO）材料相变的影响及其对多铁性能的影响。BFO在室温下是一种良好的多铁性材料，具有铁电和反铁磁的有序特性；但其实际应用受到漏电流、弱磁化和相位不稳定等问题的制约。掺杂是通过诱导结构相变和扭曲来调整物理性能的良好策略。讨论了BFO中不同元素掺杂对其多铁性和电子性能的影响机理。此外，我们还揭示了结构修改与多铁性能增强之间的相互作用，为优化bfo基材料的先进技术应用提供了见解。这篇及时的综述文章让新研究者思考并决定理解靶向掺杂在克服纯BiFeO3的局限性方面的关键作用，为其在多功能器件中的应用铺平道路。

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Phase transition driven enhancements of multiferroic properties in doped BiFeO3: A comprehensive review

In this review article, we explore the impact of doping engineering at both A and B sites with transition metals, rare earth elements, and non-metal elements on the phase transition and its effects on the multiferroic properties of BiFeO₃ (BFO) materials. BFO is a good multiferroic material at room temperature, showing ferroelectric and antiferromagnetic ordering; however, its practical applications are restricted by some problems, such as leakage current, weak magnetization, and phase instability. Doping is a good strategy to tailor the physical properties by inducing structural phase transitions and distortions. We discuss the different elemental doping in BFO and their mechanism for modifying the multiferroic and electronic properties. Furthermore, we shed some light on the interplay between structural modifications and the enhancement of multiferroic properties, providing insights into optimizing BFO-based materials for advanced technological applications. This timely review article allows the new researcher to think and decide to understand the critical role of targeted doping in overcoming the limitations of pure BiFeO₃, paving the way for its application in multifunctional devices.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.