用MOVPE法在GaAs（115）衬底上生长稀释GaAsBi合金的结构和光学性能

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-05-05 DOI:10.1016/j.mssp.2025.109649

I. Zaied , A.M. Alghurabi , H. Fitouri , A. Rebey

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引用次数: 0

摘要

高度不匹配合金（HMAs），如GaAsBi，作为传统III-V半导体在电子和光电子应用中的可能替代品，特别是在长波长红外（LWIR）光谱中引起了人们的兴趣。在本研究中，采用金属-有机气相外延（MOVPE）技术在（115）GaAs衬底上生长了一系列GaAsBi样品。利用高分辨率x射线衍射（HRXRD）、光反射率（PR）和椭偏光谱（SE）技术分别研究了材料的结构和光学性质。生长的材料比在传统衬底方向生长的材料更容易在GaAs基体中掺入铋（Bi）。测量到约70 meV/% Bi的巨大带隙减少，促进了该材料在红外范围内工作的电子和光电子器件中的应用。事实上，少量的铋（稀释合金）只需要在大块、薄膜或纳米结构中使用GaAsBi作为活性层。

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Structural and optical properties of diluted GaAsBi alloys grown on GaAs(115) substrate by MOVPE

Highly mismatched alloys (HMAs) such as GaAsBi have drawn interest as possible substitutes for conventional III-V semiconductors in electronic and optoelectronic applications, especially in the long-wavelength infrared (LWIR) spectrum. In this study, a series of GaAsBi samples have been grown on (115) GaAs substrates by metal-organic vapor phase epitaxy (MOVPE). The structural and optical properties are investigated by high-resolution X-ray diffraction (HRXRD), photoreflectance (PR), and spectroscopic ellipsometry (SE) techniques, respectively. The grown material exhibits more facility of the incorporation of bismuth (Bi) in the GaAs matrix compared to that grown on the conventional substrate direction (100). A huge bandgap reduction of about 70 meV/% Bi is measured, facilitating the application of this material in electronic and optoelectronic devices operating at infrared range. Indeed, a small amount of Bi (diluted alloys) is only required to use the GaAsBi in bulk, thin films, or nanostructures as an active layer.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.