钽和氮化钽基p-Si结构的温度依赖特性

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Tohidul Islam , Hasan Efeoǧlu , Abdulmecit Turut
{"title":"钽和氮化钽基p-Si结构的温度依赖特性","authors":"Tohidul Islam ,&nbsp;Hasan Efeoǧlu ,&nbsp;Abdulmecit Turut","doi":"10.1016/j.mssp.2025.109645","DOIUrl":null,"url":null,"abstract":"<div><div>We investigated the temperature-dependent current-voltage (<em>I-V-T</em>) characteristics data of Ta and Ta/TaN-based <em>p</em>-Si Schottky barrier diodes (SBDs). The Schottky barrier heights (SBH) for Ta/<em>p</em>-Si and Ta/TaN<sub>1-x</sub>/p-Si SBDs were obtained as 0.574 eV and 0.717 eV at 300 K, respectively. The difference between their SBHs is 0.143 eV at 300 K. At temperatures below 240 K for the Ta/TaN<sub>1-x</sub>/<em>p</em>-Si, more excess current than estimated by the TE model was observed at low bias voltages in the <em>I-V</em> curves. The excess current increased with a decrease in temperature. The phenomenon has been ascribed to the low SBH-patches embedded at the MS interface. Moreover, the thermal sensitivity <em>V-T</em> data were measured from 20 K up to 320 K at 2.0 K intervals under different current levels. It has been seen that the linear portion of the <em>V-T</em> traces of the Ta/TaN<sub>1-x</sub>/<em>p</em>-Si SBDs have corresponded to a wider temperature range with more thermal sensitivity coefficient <em>α</em> than that of the Ta/<em>p</em>-Si at each current level. For example, the <em>α</em> values of 2.573 and 2.710 mV/K at 50 nA, and 2.070 and 2.230 mV/K at 10.0 μA have been obtained for the Ta/<em>p</em>-Si and Ta/TaN<sub>1-x</sub>/<em>p</em>-Si SBDs, respectively.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109645"},"PeriodicalIF":4.2000,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Temperature-dependent characteristics of Tantalum and Tantalum nitride based p-Si structures\",\"authors\":\"Tohidul Islam ,&nbsp;Hasan Efeoǧlu ,&nbsp;Abdulmecit Turut\",\"doi\":\"10.1016/j.mssp.2025.109645\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>We investigated the temperature-dependent current-voltage (<em>I-V-T</em>) characteristics data of Ta and Ta/TaN-based <em>p</em>-Si Schottky barrier diodes (SBDs). The Schottky barrier heights (SBH) for Ta/<em>p</em>-Si and Ta/TaN<sub>1-x</sub>/p-Si SBDs were obtained as 0.574 eV and 0.717 eV at 300 K, respectively. The difference between their SBHs is 0.143 eV at 300 K. At temperatures below 240 K for the Ta/TaN<sub>1-x</sub>/<em>p</em>-Si, more excess current than estimated by the TE model was observed at low bias voltages in the <em>I-V</em> curves. The excess current increased with a decrease in temperature. The phenomenon has been ascribed to the low SBH-patches embedded at the MS interface. Moreover, the thermal sensitivity <em>V-T</em> data were measured from 20 K up to 320 K at 2.0 K intervals under different current levels. It has been seen that the linear portion of the <em>V-T</em> traces of the Ta/TaN<sub>1-x</sub>/<em>p</em>-Si SBDs have corresponded to a wider temperature range with more thermal sensitivity coefficient <em>α</em> than that of the Ta/<em>p</em>-Si at each current level. For example, the <em>α</em> values of 2.573 and 2.710 mV/K at 50 nA, and 2.070 and 2.230 mV/K at 10.0 μA have been obtained for the Ta/<em>p</em>-Si and Ta/TaN<sub>1-x</sub>/<em>p</em>-Si SBDs, respectively.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"195 \",\"pages\":\"Article 109645\"},\"PeriodicalIF\":4.2000,\"publicationDate\":\"2025-05-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800125003828\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125003828","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

我们研究了Ta和Ta/ tan基p-Si肖特基势垒二极管(sdd)的温度依赖性电流-电压(I-V-T)特性数据。在300 K下,Ta/p-Si和Ta/TaN1-x/p-Si的肖特基势垒高度分别为0.574 eV和0.717 eV。在300 K时,它们之间的SBHs差为0.143 eV。当Ta/TaN1-x/p-Si的温度低于240 K时,在低偏置电压下,在I-V曲线上观察到比TE模型估计的更多的过剩电流。过量电流随温度的降低而增加。这种现象归因于嵌入在MS界面的低sbh补丁。在20 ~ 320 K范围内,以2.0 K间隔测量了不同电流水平下的热敏V-T数据。可以看出,在每个电流水平上,Ta/TaN1-x/p-Si sdd的V-T线的线性部分对应的温度范围比Ta/p-Si的更宽,热敏系数α更高。例如,Ta/p-Si和Ta/TaN1-x/p-Si sdd在50 nA时的α值分别为2.573和2.710 mV/K,在10.0 μA时的α值分别为2.070和2.230 mV/K。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Temperature-dependent characteristics of Tantalum and Tantalum nitride based p-Si structures
We investigated the temperature-dependent current-voltage (I-V-T) characteristics data of Ta and Ta/TaN-based p-Si Schottky barrier diodes (SBDs). The Schottky barrier heights (SBH) for Ta/p-Si and Ta/TaN1-x/p-Si SBDs were obtained as 0.574 eV and 0.717 eV at 300 K, respectively. The difference between their SBHs is 0.143 eV at 300 K. At temperatures below 240 K for the Ta/TaN1-x/p-Si, more excess current than estimated by the TE model was observed at low bias voltages in the I-V curves. The excess current increased with a decrease in temperature. The phenomenon has been ascribed to the low SBH-patches embedded at the MS interface. Moreover, the thermal sensitivity V-T data were measured from 20 K up to 320 K at 2.0 K intervals under different current levels. It has been seen that the linear portion of the V-T traces of the Ta/TaN1-x/p-Si SBDs have corresponded to a wider temperature range with more thermal sensitivity coefficient α than that of the Ta/p-Si at each current level. For example, the α values of 2.573 and 2.710 mV/K at 50 nA, and 2.070 and 2.230 mV/K at 10.0 μA have been obtained for the Ta/p-Si and Ta/TaN1-x/p-Si SBDs, respectively.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信