银纳米线集成MoS2/ZnO异质结用于高效光电电荷转移。板牙。6/2025)

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-05-04 DOI:10.1002/aelm.202570018

Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong-Wook Kim

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引用次数: 0

摘要

在2400744号文章中，Joondong Kim， Dong-Wook Kim及其同事表明，银纳米线与MoS2/ZnO异质结的集成将表面光电压提高了四倍，在可见光下达到200 mV，突出了银纳米线网络的光学和电学协同优势显著增强了界面光载流子转移。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Ag Nanowire-Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer (Adv. Electron. Mater. 6/2025)

查看原文本刊更多论文

Ag Nanowire-Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer (Adv. Electron. Mater. 6/2025)

Silver Nanowire Networks

In article number 2400744, Joondong Kim, Dong-Wook Kim, and co-workers show that the integration of Ag nanowires with a MoS₂/ZnO heterojunction boosts the surface photovoltage fourfold, reaching 200 mV under visible light, highlighting significantly enhanced interfacial photocarrier transfer driven by the synergistic optical and electrical benefits of the Ag nanowire networks.

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.