Venkateswarlu Gaddam, Shaurya S. Dabas, Jinghan Gao, David J. Spry, Garrett Baucom, Nicholas G. Rudawski, Tete Yin, Ethan Angerhofer, Philip G. Neudeck, Honggyu Kim, Philip X.-L. Feng, Mark Sheplak, Roozbeh Tabrizian
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Aluminum Scandium Nitride as a Functional Material at 1000 °C (Adv. Electron. Mater. 6/2025)
Piezoelectrics
Aluminum scandium nitride (AlScN) exhibits remarkable ferroelectric, piezoelectric, and dielectric stability at extreme temperatures. In article number 2400849, Roozbeh Tabrizian and co-workers demonstrate the robust performance of TaSi2/AlScN/TaSi2 capacitors up to 1000 °C, revealing a substantial increase in piezoelectricity and a marked reduction in coercive field. These findings establish AlScN as a key functional material for space, hypersonics, deep-well, and nuclear reactor applications.
期刊介绍:
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.