高性能硅电容器中Ru/金红石Al-TiO2/Ru层堆的原子层沉积

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-05-03 DOI:10.1016/j.mssp.2025.109646

Taehyun Kim , Da Eun Lim , Hyeongjun Kim , Hyunmin Nah , Heun Park , Yoon Jang Chung , Woongkyu Lee

{"title":"高性能硅电容器中Ru/金红石Al-TiO2/Ru层堆的原子层沉积","authors":"Taehyun Kim , Da Eun Lim , Hyeongjun Kim , Hyunmin Nah , Heun Park , Yoon Jang Chung , Woongkyu Lee","doi":"10.1016/j.mssp.2025.109646","DOIUrl":null,"url":null,"abstract":"<div><div>We investigate the fabrication of high-performance silicon capacitors using atomic layer deposition (ALD) by growing metal/insulator/metal thin film layer stacks on silicon substrates. The ALD characteristics of high-quality Ru and TiO<sub>2</sub> films are presented, as well as corresponding electronic data for the individual films. In an optimized capacitor structure, we concurrently observe a large capacitance of 29 nF/mm<sup>2</sup>, a low leakage current of 1 nA/cm<sup>2</sup>, and a high breakdown voltage of 4.8 V. This was achieved by optimizing the top electrode structure and implementing Al doping in the TiO<sub>2</sub> insulator film. Our results highlight the potential of ALD-grown layer stack structures for high-performance silicon capacitors, which can be utilized in a wide range of applications that span power electronics to advanced memory devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109646"},"PeriodicalIF":4.2000,"publicationDate":"2025-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Atomic layer deposition of Ru/rutile Al-TiO2/Ru layer stacks for high-performance silicon capacitors\",\"authors\":\"Taehyun Kim , Da Eun Lim , Hyeongjun Kim , Hyunmin Nah , Heun Park , Yoon Jang Chung , Woongkyu Lee\",\"doi\":\"10.1016/j.mssp.2025.109646\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>We investigate the fabrication of high-performance silicon capacitors using atomic layer deposition (ALD) by growing metal/insulator/metal thin film layer stacks on silicon substrates. The ALD characteristics of high-quality Ru and TiO<sub>2</sub> films are presented, as well as corresponding electronic data for the individual films. In an optimized capacitor structure, we concurrently observe a large capacitance of 29 nF/mm<sup>2</sup>, a low leakage current of 1 nA/cm<sup>2</sup>, and a high breakdown voltage of 4.8 V. This was achieved by optimizing the top electrode structure and implementing Al doping in the TiO<sub>2</sub> insulator film. Our results highlight the potential of ALD-grown layer stack structures for high-performance silicon capacitors, which can be utilized in a wide range of applications that span power electronics to advanced memory devices.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"195 \",\"pages\":\"Article 109646\"},\"PeriodicalIF\":4.2000,\"publicationDate\":\"2025-05-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S136980012500383X\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S136980012500383X","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

本文研究了在硅衬底上生长金属/绝缘体/金属薄膜叠层的原子层沉积（ALD）技术制备高性能硅电容器。介绍了高质量Ru和TiO2薄膜的ALD特性，以及各自薄膜的电子数据。在优化后的电容器结构中，我们同时观察到29 nF/mm2的大电容，1 nA/cm2的低漏电流和4.8 V的高击穿电压。这是通过优化顶部电极结构和在TiO2绝缘体膜中掺杂Al来实现的。我们的研究结果强调了ald生长的层堆叠结构在高性能硅电容器方面的潜力，它可以用于从电力电子到先进存储设备的广泛应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Atomic layer deposition of Ru/rutile Al-TiO2/Ru layer stacks for high-performance silicon capacitors

We investigate the fabrication of high-performance silicon capacitors using atomic layer deposition (ALD) by growing metal/insulator/metal thin film layer stacks on silicon substrates. The ALD characteristics of high-quality Ru and TiO₂ films are presented, as well as corresponding electronic data for the individual films. In an optimized capacitor structure, we concurrently observe a large capacitance of 29 nF/mm², a low leakage current of 1 nA/cm², and a high breakdown voltage of 4.8 V. This was achieved by optimizing the top electrode structure and implementing Al doping in the TiO₂ insulator film. Our results highlight the potential of ALD-grown layer stack structures for high-performance silicon capacitors, which can be utilized in a wide range of applications that span power electronics to advanced memory devices.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.