SiC衬底上AlGaN/GaN HEMT技术的直流和射频老化试验

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-05-03 DOI:10.1016/j.microrel.2025.115772

Thomas Pallaro , Tristan Dubois , Magali De Matos , Christophe Chang , Nathalie Labat , Benoit Lambert , Nathalie Malbert

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引用次数: 0

摘要

本文重点对微波AlGaN/GaN hemt的性能和鲁棒性进行了综合评价。研究了直流老化试验中观察到的退化机制与射频老化试验中观察到的退化机制是否一致。利用时域负载-拉力设置（1.8 GHz - 18 GHz）测量射频应力期间的关键参数并表征器件，突出了射频和直流老化测试之间退化机制的关键差异。这些发现揭示了hemt在受到射频信号时的行为，强调了在实际场景中确保器件可靠性的综合分析的必要性。

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DC and RF aging test of AlGaN/GaN HEMT technology on SiC substrate

This article focuses on the comprehensive evaluation of performance and robustness in microwave AlGaN/GaN HEMTs. The study investigates whether the degradation mechanisms observed during DC aging test align with those observed during RF aging test. A time-domain load-pull setup (1.8 GHz – 18 GHz) is utilized to measure key parameters during RF stresses and characterize the devices, highlighting key differences in degradation mechanisms between RF and DC aging tests. These findings shed light on the behavior of HEMTs when subjected to a RF signal, emphasizing the necessity of comprehensive analysis for ensuring device reliability in practical scenarios.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.