无卤气相外延氮化镓生长反应器的建模与设计:组件催化表面NH3分解以复制寄生多晶形成

IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Hiroki Shimazu;Shin-Ichi Nishizawa;Shugo Nitta;Hiroshi Amano;Daisuke Nakamura
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引用次数: 0

摘要

实现长时间、大规模的氮化镓生长对于供应低成本、高质量的氮化镓至关重要。无卤气相外延(HF-VPE)是一种很有前途的体生长GaN的方法,但由于反应器组件(如源气体喷嘴)上严重的多晶沉积,这阻碍了稳定、延长的生长,因此面临挑战。在这项研究中,我们建立了模型来模拟在HF-VPE-GaN生长条件下的多晶沉积,包括GaN形成和NH3分解的表面反应。此外,我们设计了控制气体流动和相互扩散的条件,以抑制源-气喷嘴周围的多晶沉积。实验结果与模拟结果一致,表明增加Ga和NH3喷嘴之间的距离以及将鞘气从H2替换为N2可以有效地减少多晶的形成。研究结果证实,通过催化难熔组分表面分解降低NH3浓度对抑制多晶至关重要。优化喷嘴尺寸和气体种类,协同控制气体流动和相互扩散。所构建的模型有助于推进多晶抑制结构的设计和长时间体生长GaN的条件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling and Designing a GaN-Growth Reactor With Halogen-Free Vapor Phase Epitaxy: NH3 Decomposition at the Catalytic Surface of Components to Replicate Parasitic Polycrystal Formation
Achieving long-duration, large bulk GaN growth is crucial to supply low-cost, high-quality GaN. Halogen-free vapor phase epitaxy (HF-VPE) is a promising method for bulk GaN growth but faces challenges due to severe polycrystals deposition on reactor components, such as the source-gas nozzles, which impedes stable, extended growth. In this study, we developed models to simulate the polycrystal deposition in HF-VPE-GaN growth conditions by including surface reactions of GaN formation and NH3 decomposition. Moreover, we devised conditions for controlling gas flow and interdiffusion to suppress polycrystal deposition around the source-gas nozzles. Experimental results aligned with simulations, showing that increasing the distance between Ga and NH3 nozzles and replacing the sheath gas from H2 to N2 effectively minimized polycrystal formation. The findings confirm that reducing NH3 concentration through catalytic surface decomposition on refractory components is crucial to polycrystal suppression. Optimizing nozzle dimensions and gas species synergistically controls the gas flow and interdiffusion. The constructed models contribute to advancing the design of polycrystal suppressive structures and conditions for long-duration bulk GaN growth.
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来源期刊
IEEE Transactions on Semiconductor Manufacturing
IEEE Transactions on Semiconductor Manufacturing 工程技术-工程:电子与电气
CiteScore
5.20
自引率
11.10%
发文量
101
审稿时长
3.3 months
期刊介绍: The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.
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