蚀刻回焊降低STI制造过程中锥体缺陷密度的机理

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2024-12-18 DOI:10.1109/TSM.2024.3519780

Chih-Cherng Liao;Jian-Hsing Lee;Yu-Jui Chang;Kai-Chuan Kan;Ching-Kuei Shih;Ya-Huei Kuo;Pei-Chen Tsai;Chien-Hsien Song;Ke-Horng Chen

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引用次数: 0

摘要

锥形缺陷的形成是浅沟槽隔离（STI）蚀刻工艺的副作用，由氮化硅、二氧化硅的残留物或蚀刻工艺的副产品的再沉积引起。本研究旨在解释STI蚀刻过程中产生这些缺陷的机制。利用该模型可以通过简化制造过程，减少对缺陷和工艺变化的敏感性，从而提高可制造性设计，最终提高产品的可靠性和可制造性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The Mechanism of an Etching-Back to Reduce the Density of Cone Defect in STI During the Manufacturing

The formation of cone defects is a side effect of the shallow trench isolation (STI) etching process, caused by the redeposition of residue from silicon nitride, silicon dioxide, or byproducts from the etching process. This study aims to explain the mechanism responsible for these defects during STI etching. The utilization of this model can enhance the design for manufacturability by streamlining the manufacturing process, reducing susceptibility to defects and process variations, and ultimately improving the reliability and manufacturability of production.

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来源期刊

IEEE Transactions on Semiconductor Manufacturing 工程技术-工程：电子与电气

CiteScore

5.20

自引率

11.10%

发文量

101

审稿时长

3.3 months

期刊介绍： The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.