{"title":"制备Ti2O3微结构的溅射铬牺牲层实例研究","authors":"Angel Regalado-Contreras;Wencel de la Cruz","doi":"10.1109/TSM.2025.3546217","DOIUrl":null,"url":null,"abstract":"In this study, Ti2O3 microstructures were successfully fabricated using chromium (Cr) thin films as a sacrificial layer. The process is straightforward and can be monitored using an optical microscope. Atomic Force Microscopy confirmed the structures, with the Ti2O3 thin film thickness determined to be 26 nm. In situ High-resolution X-ray Photoelectron Spectroscopy was performed, confirming the synthesis of Ti2O3 thin films by reactive laser ablation and revealing spontaneous surface oxidation, resulting in a complex surface structure: TiO2 on top, TiO as an intermediate interface, and bulk Ti2O3 beneath. The high chemical selectivity of Cr sacrificial layers ensured successful microfabrication without damaging the Ti2O3. These findings highlight the importance of surface phenomena in Ti2O3 for micro-electronic device fabrication.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"38 2","pages":"356-358"},"PeriodicalIF":2.3000,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Case Study on Sputtered Chromium Sacrificial Layer for Ti2O3 Microstructure Fabrication\",\"authors\":\"Angel Regalado-Contreras;Wencel de la Cruz\",\"doi\":\"10.1109/TSM.2025.3546217\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, Ti2O3 microstructures were successfully fabricated using chromium (Cr) thin films as a sacrificial layer. The process is straightforward and can be monitored using an optical microscope. Atomic Force Microscopy confirmed the structures, with the Ti2O3 thin film thickness determined to be 26 nm. In situ High-resolution X-ray Photoelectron Spectroscopy was performed, confirming the synthesis of Ti2O3 thin films by reactive laser ablation and revealing spontaneous surface oxidation, resulting in a complex surface structure: TiO2 on top, TiO as an intermediate interface, and bulk Ti2O3 beneath. The high chemical selectivity of Cr sacrificial layers ensured successful microfabrication without damaging the Ti2O3. These findings highlight the importance of surface phenomena in Ti2O3 for micro-electronic device fabrication.\",\"PeriodicalId\":451,\"journal\":{\"name\":\"IEEE Transactions on Semiconductor Manufacturing\",\"volume\":\"38 2\",\"pages\":\"356-358\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2025-02-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Semiconductor Manufacturing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10904165/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Semiconductor Manufacturing","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10904165/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A Case Study on Sputtered Chromium Sacrificial Layer for Ti2O3 Microstructure Fabrication
In this study, Ti2O3 microstructures were successfully fabricated using chromium (Cr) thin films as a sacrificial layer. The process is straightforward and can be monitored using an optical microscope. Atomic Force Microscopy confirmed the structures, with the Ti2O3 thin film thickness determined to be 26 nm. In situ High-resolution X-ray Photoelectron Spectroscopy was performed, confirming the synthesis of Ti2O3 thin films by reactive laser ablation and revealing spontaneous surface oxidation, resulting in a complex surface structure: TiO2 on top, TiO as an intermediate interface, and bulk Ti2O3 beneath. The high chemical selectivity of Cr sacrificial layers ensured successful microfabrication without damaging the Ti2O3. These findings highlight the importance of surface phenomena in Ti2O3 for micro-electronic device fabrication.
期刊介绍:
The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.