制备Ti2O3微结构的溅射铬牺牲层实例研究

IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Angel Regalado-Contreras;Wencel de la Cruz
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引用次数: 0

摘要

在本研究中,以铬(Cr)薄膜作为牺牲层,成功制备了Ti2O3微结构。这个过程很简单,可以用光学显微镜观察。原子力显微镜证实了该结构,Ti2O3薄膜厚度为26 nm。原位高分辨率x射线光电子能谱证实了Ti2O3薄膜是通过反应性激光烧蚀合成的,并揭示了自发的表面氧化,导致了复杂的表面结构:TiO2在上面,TiO作为中间界面,下面是大块的Ti2O3。Cr牺牲层的高化学选择性确保了成功的微加工而不破坏Ti2O3。这些发现突出了Ti2O3表面现象对微电子器件制造的重要性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Case Study on Sputtered Chromium Sacrificial Layer for Ti2O3 Microstructure Fabrication
In this study, Ti2O3 microstructures were successfully fabricated using chromium (Cr) thin films as a sacrificial layer. The process is straightforward and can be monitored using an optical microscope. Atomic Force Microscopy confirmed the structures, with the Ti2O3 thin film thickness determined to be 26 nm. In situ High-resolution X-ray Photoelectron Spectroscopy was performed, confirming the synthesis of Ti2O3 thin films by reactive laser ablation and revealing spontaneous surface oxidation, resulting in a complex surface structure: TiO2 on top, TiO as an intermediate interface, and bulk Ti2O3 beneath. The high chemical selectivity of Cr sacrificial layers ensured successful microfabrication without damaging the Ti2O3. These findings highlight the importance of surface phenomena in Ti2O3 for micro-electronic device fabrication.
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来源期刊
IEEE Transactions on Semiconductor Manufacturing
IEEE Transactions on Semiconductor Manufacturing 工程技术-工程:电子与电气
CiteScore
5.20
自引率
11.10%
发文量
101
审稿时长
3.3 months
期刊介绍: The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.
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