1.27 GW/cm² Reverse Blocking E-Mode GaN-Si(100) Monolithic Heterogeneous Integration Cascode Switch With Ultralow Turn-On Voltage and Dynamic RON

In this letter, an E-Mode GaN-Si(100) monolithic heterogeneous integration cascode switch (RBMHIC-switch) with reverse blocking compatibility on a SiC substrate with an AlN buffer layer is demonstrated. The RBMHIC-switch with LGD of $22~\mu $ m showed a threshold voltage (VTH) of 2.64 V, a large forward gate voltage swing of 16.27 V, a turn-on voltage (VON) of 0.3 V, and an extremely low reverse leakage current (IR) of $3.5\times 10^{-{4}}$ mA/mm at -2000 V. The forward breakdown voltage (VFBR) of 2264 V and reverse breakdown voltage (VRBR) of 2183 V with a specific on-resistance ( $R_{\text {ON}, \text {SP}}$ ) of 3.74 m $\Omega \cdot $ cm2 were achieved, resulting in a forward power figure of merit (PFOM = V $_{\text {BR}}^{{2}}$ /RON,SP) of 1.35 GW/cm2 and reverse PFOM of 1.27 GW/cm2. The ratio between dynamic-RON and static-RON was 1.104 and 1.127 after a 10 ms 1900 V drain stress voltage (V $_{\text {DS}-\text {OFF}}$ ) and a 10 ms -1900 V V $_{\text {DS}-\text {OFF}}$ (delay time $= 1~\mu $ s) for the RBMHIC-switches, respectively, which were the best among all existing GaN power devices with reverse blocking capability. The thermal resistance at different temperatures was also extracted. The RBMHIC-switche shows decent overall characteristics as compared to the reported results.