{"title":"大功率100kw连续波q波段陀螺行波管:性能和稳定性","authors":"Wei Jiang;Chaoxuan Lu;Jianwei Zhou;Yafen Shang;Qiang Zheng;Boxin Dai;Guo Liu;Jianxun Wang;Yelei Yao;Yong Luo","doi":"10.1109/LED.2025.3553624","DOIUrl":null,"url":null,"abstract":"To satisfy the demand for high-power microwave sources, a Q-band 100 kW continuous-wave (CW) gyrotron traveling wave tube (gyro-TWT) is fabricated and experimentally demonstrated in this letter. The stability and uniformity of electron emission are greatly improved through the application of cathode coating thin-film technology. The power capacity of the device is assessed using efficient thermal management methods. Experimental results show that the gyro-TWT, driven by a 56 kV-7.9 A electron beam, achieves a maximum CW power of 115.6 kW, a gain of 54.9 dB, and an efficiency of 26.1% at 49.5 GHz. The device operates stably for a long time, with performance at the forefront of current technology.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 5","pages":"860-863"},"PeriodicalIF":4.1000,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-Power 100 kW CW Q-Band Gyro-TWT: Performance and Stability\",\"authors\":\"Wei Jiang;Chaoxuan Lu;Jianwei Zhou;Yafen Shang;Qiang Zheng;Boxin Dai;Guo Liu;Jianxun Wang;Yelei Yao;Yong Luo\",\"doi\":\"10.1109/LED.2025.3553624\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To satisfy the demand for high-power microwave sources, a Q-band 100 kW continuous-wave (CW) gyrotron traveling wave tube (gyro-TWT) is fabricated and experimentally demonstrated in this letter. The stability and uniformity of electron emission are greatly improved through the application of cathode coating thin-film technology. The power capacity of the device is assessed using efficient thermal management methods. Experimental results show that the gyro-TWT, driven by a 56 kV-7.9 A electron beam, achieves a maximum CW power of 115.6 kW, a gain of 54.9 dB, and an efficiency of 26.1% at 49.5 GHz. The device operates stably for a long time, with performance at the forefront of current technology.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":\"46 5\",\"pages\":\"860-863\"},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2025-03-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10937213/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10937213/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
High-Power 100 kW CW Q-Band Gyro-TWT: Performance and Stability
To satisfy the demand for high-power microwave sources, a Q-band 100 kW continuous-wave (CW) gyrotron traveling wave tube (gyro-TWT) is fabricated and experimentally demonstrated in this letter. The stability and uniformity of electron emission are greatly improved through the application of cathode coating thin-film technology. The power capacity of the device is assessed using efficient thermal management methods. Experimental results show that the gyro-TWT, driven by a 56 kV-7.9 A electron beam, achieves a maximum CW power of 115.6 kW, a gain of 54.9 dB, and an efficiency of 26.1% at 49.5 GHz. The device operates stably for a long time, with performance at the forefront of current technology.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.