基于ZnSnO纳米纤维突触晶体管的pH识别仿生味觉受体

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Xianglong Wang;Peilong Xu;Wenxin Zhang;Jiaqi Xu;Kai Liu;Guangya Liu;Fengyun Wang
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引用次数: 0

摘要

生理和神经疾病的发展通常伴随着酸性变化的产生,因此开发生物传感系统来检测pH变化以预防早期器官病变至关重要。由于电解质/纳米线界面处的双电层,人工突触晶体管可以灵敏地检测pH值的变化。然而,基于突触晶体管监测机体pH值变化的研究很少。本研究以氧化锌锡(ZnSnO)纳米线为通道材料制备了电解门控突触晶体管。所制备的器件可以成功地模拟生物突触中酸感离子通道(asic)的功能,包括酸性条件下的兴奋性突触后电流(EPSCs)、成对脉冲促进(PPFs)和短期增强(stp)。此外,构建${3}\times {3}$ ZnSnO突触晶体管阵列来监测不同强度和不同区域的酸刺激,以模拟人类的舌头能力。这项工作不仅可以促进对人工突触装置中ASIC功能的理解,而且还为开发具有集成传感和记忆能力的生物风味传感系统提供了一种新的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Bionic Gustatory Receptor for pH Identification Based on ZnSnO Nanofiber Synaptic Transistor
The development of physiology and neurological diseases is normally accompanied by the production of acidic changes, making it crucial to develop biosensing system to detect pH variations to prevent early organ lesions. Due to the electrical double layer at the electrolyte/nanowire interface, artificial synaptic transistors can sensitively detect the pH variations. However, few studies focus on monitoring pH variations of the body based on synaptic transistors. In this study, electrolyte-gated synaptic transistors were fabricated using zinc tin oxide (ZnSnO) nanowires as channel materials. The fabricated devices can successfully mimic the functionality of acid-sensing ion channels (ASICs) in biological synapses, including excitatory postsynaptic currents (EPSCs), paired-pulse facilitations (PPFs), and short-term potentiations (STPs) under acidic conditions. Furthermore, ${3}\times {3}$ ZnSnO synaptic transistor arrays were constructed to monitor acid stimulations of diverse intensities and different regions to mimic the tongue ability of human. This work can not only advance the understanding of ASIC functionality in artificial synaptic devices, but also provide a novel approach to develop bioinspired taste-sensing systems with integrated sensing and memory capabilities.
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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