Yujia Luo , Xinying Jiang , Qiong Peng , Javed Rehman , Mohib Ullah , Saiful Arifin Shafiee , Lin Tao , Muhammad Faizan , Ammar M. Tighezza , Mehwish K. Butt
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Moreover, the VC<sub>4</sub> monolayer can effectively achieve double-layer adsorption for K/Mg on both sides of its surface. The VC<sub>4</sub> exhibits a remarkably high theoretical capability of 812 mA h/g for KIBs and 1624 mA h/g for MgIBs. These exceptional capacities for KIBs and MgIBs primarily arise from the minimal Coulombic repulsion forces between the VC<sub>4</sub> sheet and K/Mg. Moreover, K and Mg portray large diffusivity on VC<sub>4</sub>, illustrated by low energy barriers of 0.15 eV and 0.09 eV, respectively. Moreover, the open circuit voltages (OCV), measuring 0.28 V for MgIBs and 0.49 V for KIBs, are notably lower than in previous studies. Despite the relatively large size of K<sup>+</sup>/Mg<sup>+</sup> ions, the maximum alteration in VC<sub>4</sub> lattice parameters stands at 6.01 % and 6.8 %, respectively. This observation highlights the material's structural stability, ensuring robust cycling performance for KIBs and MgIBs. These results underscore the potential of the VC<sub>4</sub> monolayer as a novel candidate for KIBs and MgIBs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109602"},"PeriodicalIF":4.2000,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"First-principles analysis of potassium and magnesium adsorption on an innovative VC4 monolayer\",\"authors\":\"Yujia Luo , Xinying Jiang , Qiong Peng , Javed Rehman , Mohib Ullah , Saiful Arifin Shafiee , Lin Tao , Muhammad Faizan , Ammar M. Tighezza , Mehwish K. 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引用次数: 0
摘要
镁离子电池(MgIBs)和钾离子电池(KIBs)被认为是优秀的储能选择,因为它们价格合理,并且在摇椅机制上与锂离子电池(LIBs)相似。然而,一个重大的挑战是缺乏合适的电极材料,可以为kib和mgib提供高性能。我们的研究利用基于密度泛函理论(DFT)的第一性原理计算来评估VC4单层作为mgib和kib阳极材料的潜力。结果表明,Mg和K在VC4表面的吸附与负有利能相关。此外,VC4单层可以在其表面两侧有效地实现对K/Mg的双层吸附。VC4表现出非常高的理论性能,kib为812 mA h/g, mgib为1624 mA h/g。kib和mgib的这些特殊能力主要来自于VC4薄片和K/Mg之间的最小库仑排斥力。此外,K和Mg在VC4上表现出较大的扩散率,分别表现为0.15 eV和0.09 eV的低能垒。此外,mgib的开路电压(OCV)为0.28 V, kib为0.49 V,明显低于之前的研究。尽管K+/Mg+离子尺寸较大,但VC4晶格参数的最大变化分别为6.01%和6.8%。这一观察结果突出了材料的结构稳定性,确保了kib和mgib的强大循环性能。这些结果强调了VC4单层作为kib和mgib的新候选物的潜力。
First-principles analysis of potassium and magnesium adsorption on an innovative VC4 monolayer
Mg-ion batteries (MgIBs) and K-ion batteries (KIBs) are considered excellent energy storage options due to their affordability and similarity to Li-ion batteries (LIBs) regarding the rocking chair mechanism. Nevertheless, a significant challenge exists in the form of a shortage of suitable electrode materials that can provide high performance for KIBs and MgIBs. Our study utilized first-principles calculations based on density functional theory (DFT) to evaluate the potential of the VC4 monolayer as an anode material for MgIBs and KIBs. The results indicate that Mg and K adsorption on the surface of VC4 is associated with negative favorable energies. Moreover, the VC4 monolayer can effectively achieve double-layer adsorption for K/Mg on both sides of its surface. The VC4 exhibits a remarkably high theoretical capability of 812 mA h/g for KIBs and 1624 mA h/g for MgIBs. These exceptional capacities for KIBs and MgIBs primarily arise from the minimal Coulombic repulsion forces between the VC4 sheet and K/Mg. Moreover, K and Mg portray large diffusivity on VC4, illustrated by low energy barriers of 0.15 eV and 0.09 eV, respectively. Moreover, the open circuit voltages (OCV), measuring 0.28 V for MgIBs and 0.49 V for KIBs, are notably lower than in previous studies. Despite the relatively large size of K+/Mg+ ions, the maximum alteration in VC4 lattice parameters stands at 6.01 % and 6.8 %, respectively. This observation highlights the material's structural stability, ensuring robust cycling performance for KIBs and MgIBs. These results underscore the potential of the VC4 monolayer as a novel candidate for KIBs and MgIBs.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
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