Ni-Mo /g-C3N4双金属复合电催化剂的合成及性能增强

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yu-Chin Shen , Dipti R. Sahu , Jow-Lay Huang , Yu-Min Shen , Sheng-Chang Wang
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引用次数: 0

摘要

石墨氮化碳(g-C3N4)和ni - mo基电催化剂因其良好的光催化剂性能和在碱性析氢反应(HER)中的优异活性而受到广泛关注。在本研究中,通过简单的热聚合法与后续的湿化学工艺和固态烧结相结合,成功合成了NixMoy/g-C3N4复合材料。通过调整活性位点的负载和Ni/Mo摩尔比制备了不同的样品,并利用傅里叶变换红外光谱(FT-IR)、x射线衍射(XRD)、x射线光电子能谱(XPS)、透射电子显微镜(TEM)和循环伏安法(CV)对其结构和组成进行了分析。XRD谱图显示g-C3N4(002)衍射峰强度减弱,表明结晶度发生了改变。电化学表面积(ECSA)分析证实了活性位点含量的增加,在添加20 wt%时达到峰值。进一步研究表明,当Ni/Mo摩尔比为4:1时,由于Ni - Mo的协同作用和突出的Ni(111)面,20 wt% Ni2.0Mo0.5/g-C3N4复合材料在1 M KOH-462 mV和98 mV/dec时的过电位和Tafel斜率最低。此外,g-C3N4有效地阻止了NixMoy在空气中的自燃,保证了复合材料的稳定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis and performance enhancement of Ni–Mo/g-C3N4 bimetallic composites electrocatalysts
Graphitic carbon nitride (g-C3N4) and Ni-Mo-based electrocatalysts have garnered significant attention for their promising performance as photocatalysts and their excellent activity in alkaline hydrogen evolution reactions (HER). In this study, NixMoy/g-C3N4 composites were successfully synthesized by combining a simple thermal polymerization method with a subsequent wet-chemical process and solid-state sintering. Various samples were prepared by adjusting both the loading of active sites and the Ni/Mo molar ratio, and their structures and compositions were analyzed using Fourier-transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and cyclic voltammetry (CV). XRD patterns revealed a reduction in the intensity of the g-C3N4 (002) diffraction peak, indicating altered crystallinity. Electrochemical surface area (ECSA) analysis confirmed that increasing the active site content, peaking at a 20 wt% addition. Further investigation showed that at a Ni/Mo molar ratio of 4:1, the 20 wt% Ni2.0Mo0.5/g-C3N4 composite achieved the lowest overpotential and Tafel slope in 1 M KOH—462 mV and 98 mV/dec, respectively—owing to the synergistic effect of Ni–Mo and the prominent Ni(111) facet. Moreover, g-C3N4 effectively prevented the spontaneous combustion of NixMoy in air, ensuring the stability of the composite.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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