{"title":"机器学习辅助理解由点缺陷引起的铌酸锂的深度相关热导率","authors":"Yunjia Bao, Tao Chen, Zhuo Miao, Weidong Zheng, Puqing Jiang, Kunfeng Chen, Ruiqiang Guo, Dongfeng Xue","doi":"10.1002/aelm.202400944","DOIUrl":null,"url":null,"abstract":"Lithium niobate (LiNbO<sub>3</sub>, LN) has unique electro-optic and piezoelectric properties, making it widely used in optical devices, telecommunications, sensors, and acoustic systems. Thermal conductivity <i>κ</i> is a critical property influencing the performance and reliability of these applications. Point defects commonly exist in LN and can significantly reduce its <i>κ</i>. However, the effects of point defects on thermal transport in LN remain poorly understood. In this work, LN crystals are prepared through thermal reduction at 600–800 °C, inducing a depth-dependent distribution of oxygen vacancies (V<sub>O</sub>) that increases in concentration with increasing reduction temperature. Time-domain thermoreflectance and square-pulsed source measurements reveal a significant suppression and a notable gradient in <i>κ</i>, attributed to the depth-dependent distribution of V<sub>O</sub>. A machine learning potential with ab initio accuracy is developed to simulate the impact of typical point defects on thermal transport in LN, demonstrating that V<sub>O</sub> predominantly suppresses <i>κ</i> by affecting the transport of low-frequency phonons below 6 THz. Notably, niobium vacancies and antisite defects exhibit similar effects, whereas lithium vacancies show minimal impact. This work highlights the dominant role of V<sub>O</sub> in modulating <i>κ</i> and provides insights into defect engineering for advanced LN-based devices and similar ferroelectric crystals.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"70 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Machine-Learning-Assisted Understanding of Depth-Dependent Thermal Conductivity in Lithium Niobate Induced by Point Defects\",\"authors\":\"Yunjia Bao, Tao Chen, Zhuo Miao, Weidong Zheng, Puqing Jiang, Kunfeng Chen, Ruiqiang Guo, Dongfeng Xue\",\"doi\":\"10.1002/aelm.202400944\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Lithium niobate (LiNbO<sub>3</sub>, LN) has unique electro-optic and piezoelectric properties, making it widely used in optical devices, telecommunications, sensors, and acoustic systems. Thermal conductivity <i>κ</i> is a critical property influencing the performance and reliability of these applications. Point defects commonly exist in LN and can significantly reduce its <i>κ</i>. However, the effects of point defects on thermal transport in LN remain poorly understood. In this work, LN crystals are prepared through thermal reduction at 600–800 °C, inducing a depth-dependent distribution of oxygen vacancies (V<sub>O</sub>) that increases in concentration with increasing reduction temperature. Time-domain thermoreflectance and square-pulsed source measurements reveal a significant suppression and a notable gradient in <i>κ</i>, attributed to the depth-dependent distribution of V<sub>O</sub>. A machine learning potential with ab initio accuracy is developed to simulate the impact of typical point defects on thermal transport in LN, demonstrating that V<sub>O</sub> predominantly suppresses <i>κ</i> by affecting the transport of low-frequency phonons below 6 THz. Notably, niobium vacancies and antisite defects exhibit similar effects, whereas lithium vacancies show minimal impact. This work highlights the dominant role of V<sub>O</sub> in modulating <i>κ</i> and provides insights into defect engineering for advanced LN-based devices and similar ferroelectric crystals.\",\"PeriodicalId\":110,\"journal\":{\"name\":\"Advanced Electronic Materials\",\"volume\":\"70 1\",\"pages\":\"\"},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2025-04-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/aelm.202400944\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202400944","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Machine-Learning-Assisted Understanding of Depth-Dependent Thermal Conductivity in Lithium Niobate Induced by Point Defects
Lithium niobate (LiNbO3, LN) has unique electro-optic and piezoelectric properties, making it widely used in optical devices, telecommunications, sensors, and acoustic systems. Thermal conductivity κ is a critical property influencing the performance and reliability of these applications. Point defects commonly exist in LN and can significantly reduce its κ. However, the effects of point defects on thermal transport in LN remain poorly understood. In this work, LN crystals are prepared through thermal reduction at 600–800 °C, inducing a depth-dependent distribution of oxygen vacancies (VO) that increases in concentration with increasing reduction temperature. Time-domain thermoreflectance and square-pulsed source measurements reveal a significant suppression and a notable gradient in κ, attributed to the depth-dependent distribution of VO. A machine learning potential with ab initio accuracy is developed to simulate the impact of typical point defects on thermal transport in LN, demonstrating that VO predominantly suppresses κ by affecting the transport of low-frequency phonons below 6 THz. Notably, niobium vacancies and antisite defects exhibit similar effects, whereas lithium vacancies show minimal impact. This work highlights the dominant role of VO in modulating κ and provides insights into defect engineering for advanced LN-based devices and similar ferroelectric crystals.
期刊介绍:
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.