Efficient and Robust Resistive Switching Behaviour of MoS$_{2}$ Based Memristor

This study investigates the resistive-switching characteristics of MoS$_{2}$-based memristors, demonstrating their potential for different device applications. The device, composed of MoS$_{2}$ nanosheets positioned between silver (Ag) and fluorine-doped tin oxide (FTO) electrodes, exhibits distinct switching behaviors under different conditions. Under DC bias, the device initially shows rectification-mediated switching, characterized by asymmetric current-voltage (I-V) curves due to Schottky barriers at the MoS$_{2}$-metal interfaces. However, upon ultra violet (UV) illumination, the device transitions to conductance-mediated switching, which is attributed to the generation of photogenerated carriers that reduce Schottky barriers and enhance conductivity. This transition provides a controllable mechanism for tuning the resistive states, enabling precise modulation of the device's performance. The memristor demonstrates repeatable and stable switching characteristics, making it suitable for low-power memory applications and neuromorphic systems. Furthermore, the dual response to both voltage and light makes the MoS$_{2}$ memristor a promising candidate for developing light-tunable memory devices that can emulate synaptic behavior. These results highlight the potential of MoS$_{2}$-based memristors for integration into advanced memory and computational systems, offering a path toward energy-efficient, flexible, and multifunctional devices.