导体损耗和金属过蚀对集成超导共面波导谐振器的影响

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Daniel Rocha-Aguilera , Gabriela Méndez-Jerónimo , Joel Molina-Reyes
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引用次数: 0

摘要

在这项工作中,提出了适用于量子计算应用的超导共面波导谐振器(CPWR)发展的基本准则,以及强调模式定义影响的模拟和实验结果。采用RLC等效电路模型和传输线模型对谐振频率在5 ~ 20 GHz之间的CPWR进行了仿真和建模,并采用Al/Si和Al/SiO2/Si结构制作了CPWR。利用铝的电阻率值在环境温度和超导状态之间对应的温度范围内进行了有限元模拟。仿真结果证实了导体损耗对谐振器质量因子的影响。为了研究耦合结构的影响,考虑了间隙耦合和手指耦合电容。结果表明,这些耦合结构可以实现过耦合和欠耦合。最后,对模拟、模型和环境温度测量结果进行了相关性分析。从这个比较中,我们发现实验和理论数据之间的差异可以归因于al基CPWR的关键尺寸的光刻定义不完善,指出了在微波环境下工作的集成电路的制造工艺的相关性和影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Impact of conductor losses and metal overetching on integrated superconducting coplanar waveguide resonators

Impact of conductor losses and metal overetching on integrated superconducting coplanar waveguide resonators
In this work, basic guidelines for the development of superconducting coplanar waveguide resonators (CPWR) suitable for quantum computing applications are presented along with simulation and experimental results that highlight the impact of pattern definition. CPWR with resonance frequencies between 5 and 20 GHz were designed, simulated, modeled using an RLC equivalent circuit model and a transmission line model, and fabricated using Al/Si and Al/SiO2/Si structures. Finite element simulations were done using resistivity values for Al corresponding to temperatures in the range between ambient temperature and the superconducting regime. From the simulations, the impact of conductor losses in the quality factors of the resonators was confirmed. To study the effect of the coupling structures, gap and finger coupling capacitors were considered. Results show that undercoupled and overcoupled conditions can be achieved from those coupling structures. Finally, simulations, models and ambient-temperature measurements were correlated. From this comparison, it was found that differences between experimental and theoretical data can be attributed to an imperfect photolithographic definition of the critical dimensions for Al-based CPWR, pointing out the relevance and impact of fabrication processes for integrated circuits operating in the microwave regime.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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