Daniel Rocha-Aguilera , Gabriela Méndez-Jerónimo , Joel Molina-Reyes
{"title":"导体损耗和金属过蚀对集成超导共面波导谐振器的影响","authors":"Daniel Rocha-Aguilera , Gabriela Méndez-Jerónimo , Joel Molina-Reyes","doi":"10.1016/j.mssp.2025.109614","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, basic guidelines for the development of superconducting coplanar waveguide resonators (CPWR) suitable for quantum computing applications are presented along with simulation and experimental results that highlight the impact of pattern definition. CPWR with resonance frequencies between 5 and 20 GHz were designed, simulated, modeled using an RLC equivalent circuit model and a transmission line model, and fabricated using Al/Si and Al/SiO<sub>2</sub>/Si structures. Finite element simulations were done using resistivity values for Al corresponding to temperatures in the range between ambient temperature and the superconducting regime. From the simulations, the impact of conductor losses in the quality factors of the resonators was confirmed. To study the effect of the coupling structures, gap and finger coupling capacitors were considered. Results show that undercoupled and overcoupled conditions can be achieved from those coupling structures. Finally, simulations, models and ambient-temperature measurements were correlated. From this comparison, it was found that differences between experimental and theoretical data can be attributed to an imperfect photolithographic definition of the critical dimensions for Al-based CPWR, pointing out the relevance and impact of fabrication processes for integrated circuits operating in the microwave regime.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"195 ","pages":"Article 109614"},"PeriodicalIF":4.2000,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of conductor losses and metal overetching on integrated superconducting coplanar waveguide resonators\",\"authors\":\"Daniel Rocha-Aguilera , Gabriela Méndez-Jerónimo , Joel Molina-Reyes\",\"doi\":\"10.1016/j.mssp.2025.109614\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this work, basic guidelines for the development of superconducting coplanar waveguide resonators (CPWR) suitable for quantum computing applications are presented along with simulation and experimental results that highlight the impact of pattern definition. CPWR with resonance frequencies between 5 and 20 GHz were designed, simulated, modeled using an RLC equivalent circuit model and a transmission line model, and fabricated using Al/Si and Al/SiO<sub>2</sub>/Si structures. Finite element simulations were done using resistivity values for Al corresponding to temperatures in the range between ambient temperature and the superconducting regime. From the simulations, the impact of conductor losses in the quality factors of the resonators was confirmed. To study the effect of the coupling structures, gap and finger coupling capacitors were considered. Results show that undercoupled and overcoupled conditions can be achieved from those coupling structures. Finally, simulations, models and ambient-temperature measurements were correlated. From this comparison, it was found that differences between experimental and theoretical data can be attributed to an imperfect photolithographic definition of the critical dimensions for Al-based CPWR, pointing out the relevance and impact of fabrication processes for integrated circuits operating in the microwave regime.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"195 \",\"pages\":\"Article 109614\"},\"PeriodicalIF\":4.2000,\"publicationDate\":\"2025-04-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800125003518\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125003518","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Impact of conductor losses and metal overetching on integrated superconducting coplanar waveguide resonators
In this work, basic guidelines for the development of superconducting coplanar waveguide resonators (CPWR) suitable for quantum computing applications are presented along with simulation and experimental results that highlight the impact of pattern definition. CPWR with resonance frequencies between 5 and 20 GHz were designed, simulated, modeled using an RLC equivalent circuit model and a transmission line model, and fabricated using Al/Si and Al/SiO2/Si structures. Finite element simulations were done using resistivity values for Al corresponding to temperatures in the range between ambient temperature and the superconducting regime. From the simulations, the impact of conductor losses in the quality factors of the resonators was confirmed. To study the effect of the coupling structures, gap and finger coupling capacitors were considered. Results show that undercoupled and overcoupled conditions can be achieved from those coupling structures. Finally, simulations, models and ambient-temperature measurements were correlated. From this comparison, it was found that differences between experimental and theoretical data can be attributed to an imperfect photolithographic definition of the critical dimensions for Al-based CPWR, pointing out the relevance and impact of fabrication processes for integrated circuits operating in the microwave regime.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.