(Et2NH)PbBr3钙钛矿纳米晶体包裹在金属有机框架内,发出明亮且可恢复稳定的绿色发光

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Tayebeh Hemmati , Reza Sahraei , Ali Naghipour , Ehsan Soheyli , Sadaf Samiei
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引用次数: 0

摘要

为了促进光电结构的发展,设计新型发光金属卤化物钙钛矿纳米晶体(PNCs)是当前研究的前沿。本研究利用金属有机框架(MOFs)解决了与pnc相关的不稳定性问题。成功地提出了一种简单的合成(Et2NH)PbBr3@Uio-67复合材料的方法,涉及有机盐(Et2)NHBr和pbbr2 - mof的分离形成。随后,将甲醇中的(Et2)NHBr引入到PbBr2@Uio-67中的甲苯中,以产生最终的复合材料,该复合材料包括嵌入MOF基质中的纳米级pnc。所得样品在536nm处呈现出明亮的绿色发射,半峰宽(FWHM)为20nm,发射量子产率为51.4%。利用brunauer - emmet - teller (BET)测量方法对复合材料的孔隙度进行了表征,揭示了孔径范围为3.5至3.9 nm。发射衰减曲线符合双指数函数,表明其平均寿命为17.6 ns。通过长时间的储存、紫外线照射和热处理,证明了复合材料的稳定性增强,证实了Uio-67的有效钝化作用,即使在高温(140°C)下也能保持可恢复的发射,而发射波长没有变化。该反应方法的简单性和多功能性,在低温下进行,不需要惰性气氛,结合强而纯的绿色发射和在恶劣条件下的显著耐久性,使制造的纳米复合材料成为轻型面板显示应用的有前途的候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Bright and recoverably stable green emission of (Et2NH)PbBr3 perovskite nanocrystals encapsulated within metal organic framework
To advance the development of optoelectronic structures, it is essential to design novel compositions of luminescent metal halide perovskite nanocrystals (PNCs), which are at the forefront of current research endeavors. This study addresses the instability issues associated with PNCs by utilizing metal-organic frameworks (MOFs). A straightforward methodology is successfully proposed for the synthesis of (Et2NH)PbBr3@Uio-67 composites, involving the separate formation of the organic salt (Et2)NHBr and PbBr2-MOFs. Subsequently, (Et2)NHBr in methanol is introduced to PbBr2@Uio-67 in toluene to yield a final composite comprising nanoscale PNCs embedded within the MOF matrix. The resulting samples exhibit a bright green emission at approximately 536 nm, with a narrow full width at half maximum (FWHM) of 20 nm and an emission quantum yield of 51.4 %. The porosity of the composite was characterized using Brunauer–Emmett–Teller (BET) measurements, revealing pore diameters ranging from 3.5 to 3.9 nm. Emission decay profiles were well-fitted to a biexponential function, indicating an average lifetime of 17.6 ns. The enhanced stability of the composite was demonstrated through prolonged storage, UV-irradiation, and thermal treatment, confirming the effective passivating role of Uio-67, which maintained recoverable emission even at elevated temperatures (140 °C) with no change in emission wavelength. The simplicity and versatility of the reaction method, conducted at low temperatures without the need for an inert atmosphere, combined with the strong and pure green emission and significant durability under harsh conditions, position the fabricated nanocomposite as a promising candidate for light panel display applications.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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