Operation of junctionless nanowire transistors down to 4.2 Kelvin

In this work, an experimental characterization of SOI junctionless nanowire transistors operating in liquid helium temperature is conducted. DC measurements are performed in a temperature range from 300 K down to 4.2 K in devices with variable geometrical dimensions, namely the gate length and the fin width. Different electrical parameters are analyzed, such as the threshold voltage, the subthreshold slope, the low-field mobility, and the drain-induced barrier lowering (DIBL). The temperature reduction helps partially suppress short-channel effects, leading to improvement in these parameters while preserving good electrostatic control, even for highly scaled channel lengths.