狄拉克源场效应管性能极限的研究

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-04-23 DOI:10.1016/j.sse.2025.109124

Tommaso Ugolini, Elena Gnani

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引用次数: 0

摘要

在这项工作中，我们开发了一个二维（2D）模拟工具，在弹道输运的假设下，处理二维狄拉克源（DS）场效应晶体管半导体部分的泊松方程。接下来，我们使用WKB近似来计算传输概率的电流曲线。结果表明，电流对石墨烯-半导体异质结的隧穿概率非常敏感。考虑了不同的栅极绝缘材料和栅极长度，目的是确定ds - fet性能中的任何可能的限制。所获得的结果强调了一些重要问题，同时证实可以实现40 mV/dec的最小亚阈值摆幅（SS），并且SS值低于60 mV/dec可以延长至35年。

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Investigation on the performance limits of Dirac-source FETs

In this work, we develop a two-dimensional (2D) simulation tool addressing Poisson’s equation within the semiconductor section of a 2D Dirac source (DS) field-effect transistor under the assumption of ballistic transport. Next, we compute the current curves using the WKB approximation for the calculation of the transmission probability. The current turns out to be quite sensitive to the tunneling probability at the graphene-semiconductor heterojunction. Different gate-insulating materials and gate lengths are considered with the aim of identifying any possible limitations in the performance of DS-FETs. The obtained results highlight some important issues, while confirming that a minimum subthreshold swing (SS) of 40 mV/dec can be achieved and that SS values below 60 mV/dec can be extended up to three and a half decades.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.