基于果胶掺杂氧化石墨烯忆阻器的人工突触与痛觉行为

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-04-27 DOI:10.1016/j.mssp.2025.109592

Ming Liu , Yanmei Sun , Zekai Zhang

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引用次数: 0

摘要

近年来，具有突触仿生行为的记忆电阻器受到了广泛的关注，在类脑神经和类脑植入领域有着广泛的应用。疼痛感受器是一种感觉疼痛的神经系统。它是一种特殊的感觉受体，可以检测有害刺激并作出反应。本研究以果胶掺杂氧化石墨烯为介质层，制备了保留性能好、耐久性能好、开关比高达104的Al/果胶- go /ITO忆阻器。它可以模拟各种突触功能，成功地实现了痛觉受体的基本特征。突触学习行为包括短期可塑性、长期可塑性、脉冲振幅依赖性可塑性、脉冲数量依赖性可塑性、学习-遗忘-再学习和联想记忆。此外，通过对装置施加电脉冲信号来验证疼痛感受器的关键特性，包括阈值、非适应性、放松和敏化。该装置具有神经仿生学和痛觉行为，在神经机器人、电子神经皮肤等领域的发展具有潜在的应用价值。

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Artificial synapse and pain perception behavior based on pectin doped graphene oxide memristor

In recent years, memristors with synaptic bionic behavior have received great attention, and they have a wide range of applications in the field of brain-like nerve and brain-like implant. The pain receptor is a kind of nervous system that senses pain. It is a special sensory receptor that can detect and respond to harmful stimuli. In this work, Al/pectin-GO/ITO memristor with good retention, good durability and switching ratio up to 10⁴ was prepared by using pectin doped graphene oxide as the dielectric layer. It can simulate various synaptic functions and successfully realize the basic characteristics of pain receptors. Synaptic learning behaviors include short-term plasticity, long-term plasticity, impulse amplitude-dependent plasticity, impulse quantity dependent plasticity, learn-forget-relearning, and associative memory. In addition, the key characteristics of the pain receptors were validated by applying an electrical pulse signal to the device, including threshold, non-adaptation, relaxation, and sensitization. This device with both neurobionics and pain sensing behavior has potential application value in the development of neurorobotics, electronic neuro-skin and other fields.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.