基于Ag/BiPO4/TiO2纳米棒阵列的AFP肿瘤标记物痕量检测适体生物传感器

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-04-26 DOI:10.1016/j.mssp.2025.109583

Yao Wang , Tao Jing , Haiyan Qi , Yunpeng Zhao , Shufeng Wan , Jinxin Li

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引用次数: 0

摘要

甲胎蛋白（AFP）是原发性肝癌早期诊断的重要肿瘤标志物。在这项研究中，基于银纳米粒子（Ag NPs）、BiPO4和TiO2组成的纳米棒阵列（NRA）电极，开发了一种新的光电化学（PEC）适体传感器。这种感应传感器能够快速和高灵敏度地检测微量AFP水平。在BiPO4和TiO2之间形成II型n-n异质结，再加上Ag NPs的表面等离子体共振（SPR）效应，显著提高了光生电子-空穴对的分离效率，扩大了可见光下的吸收范围。因此，PEC传感器在实际样品分析中表现出增强的光响应，出色的稳定性和卓越的选择性。在AFP浓度范围（0.001 ~ 500 ng/mL）内，光电流响应与AFP浓度的对数呈线性关系，检测限（LOD）为0.53 ng/mL （S/N = 3）。这些结果表明，PEC配体传感器是临床诊断中可靠、灵敏的AFP检测平台。

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Photoelectrochemical Ag/BiPO4/TiO2 nanorod array-based aptamer biosensor for AFP tumor marker trace detection

Alpha-fetoprotein (AFP) serves as a critical tumor marker for the early diagnosis of primary liver cancer. In this study, a novel photoelectrochemical (PEC) aptasensor was developed based on a nanorod array (NRA) electrode composed of Ag nanoparticles (Ag NPs), BiPO₄, and TiO₂. This aptasensor enabled rapid and highly sensitive detection of trace levels of AFP. The formation of a type II n-n heterojunction between BiPO₄ and TiO₂, coupled with the surface plasmon resonance (SPR) effect of Ag NPs, significantly enhanced the separation efficiency of photogenerated electrons-hole pairs and expanded the absorption range under visible light. As a result, the PEC aptasensor exhibited enhanced photoresponse, outstanding stability, and exceptional selectivity in real sample analyses. A linear relationship was observed between the photocurrent response and the logarithm of AFP concentration within the AFP concentration range from 0.001 to 500 ng/mL, with a detection limit (LOD) of 0.53 ng/mL (S/N = 3). These results suggest the proposed PEC aptasensor is a promising platform for reliable and sensitive AFP detection in clinical diagnostics.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.