由金纳米粒子和二氧化钛组成的纳米子弹结构的制备

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-04-26 DOI:10.1016/j.mssp.2025.109557

Shin-ichiro Yanagiya , Akihiro Yamamoto , Satoshi Sugano , Retsuo Kawakami

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引用次数: 0

摘要

合成了一种尖端为金纳米粒子（AuNPs），主体为棒状二氧化钛的纳米子弹结构。采用气相溅射法将氧化钛沉积到分散在聚合物衬底上的直径为40 nm的AuNPs上。二氧化钛优先在aunp上成核并通过单向凝固生长。选择软性塑料薄膜作为衬底来隔离纳米子弹结构，通过弯曲将其机械分离。高分辨率透射电子显微镜和选择区域衍射分析显示，二氧化钛在AuNPs附近呈无定形结构，在TiO2生长100 nm后观察到锐钛矿型晶体。非晶相的出现是因为锐钛矿相由于aunp的曲率引起的应变而不稳定。热处理导致TiO2在aunp附近结晶。

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Fabrication of nanobullet structures composed of gold nanoparticles and titanium dioxide

A nanobullet structure consisting of gold nanoparticles (AuNPs) at the apex and rod-shaped titanium dioxide in the main body was synthesized. Titanium oxide was vapor-phase-deposited by sputtering onto AuNPs (diameter of 40 nm) dispersed on a polymer substrate. Titanium dioxide nucleated preferentially on the AuNPs and grew via unidirectional solidification. A soft plastic film was selected as the substrate to isolate the nanobullet structures, which were mechanically separated by bending. High-resolution transmission electron microscopy and selected area diffraction analysis revealed that titanium dioxide exhibited an amorphous structure near the AuNPs, and anatase-type crystallites were observed after 100 nm of TiO₂ growth. The amorphous phase appears because the anatase phase was unstable due to the strain introduced by the curvature of the AuNPs. Thermal treatment resulted in crystallization of TiO₂ near the AuNPs.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.