基于夹层小分子和绝缘层结构的晶体管隧穿介电厚度依赖行为。板牙。5/2025)

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-04-23 DOI:10.1002/aelm.202570014

Dong Hyun Lee, Yunchae Jeon, Junhwan Choi, Hocheon Yoo

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引用次数: 0

摘要

在第2400910号文章中，Junhwan Choi， Hocheon Yoo和同事提出了基于对二烯隧道介电层（TDL）厚度的可调特性的浮栅器件。薄的tdl可以隧穿，而厚的层在纸基板上表现出强大的保留和灵活性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Tunneling Dielectric Thickness-Dependent Behaviors in Transistors Based on Sandwiched Small Molecule and Insulating Layer Structures (Adv. Electron. Mater. 5/2025)

查看原文本刊更多论文

Tunneling Dielectric Thickness-Dependent Behaviors in Transistors Based on Sandwiched Small Molecule and Insulating Layer Structures (Adv. Electron. Mater. 5/2025)

Tunneling Dielectric Thickness

In article number 2400910, Junhwan Choi, Hocheon Yoo, and co-workers present floating gate devices with tunable characteristics based on the parylene tunneling dielectric layer (TDL) thickness. Thin TDLs enable tunneling, while thicker layers exhibit photomemory with robust retention and flexibility on paper substrates.

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.