光散射成像与机器学习相结合的内部缺陷深度预测技术

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Daichi Yamaura, Yoshitaro Sakata, Nao Terasaki
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引用次数: 0

摘要

精细抛光对于实现高性能晶圆的纳米级平面度至关重要。随着对高精度工艺要求的不断提高,抛光过程中潜在缺陷的出现已成为一个重大挑战。发现潜在的缺陷至关重要;然而,获取有关这些缺陷的精确深度信息对于确定适当的去除余量同样重要。本研究的重点是开发一种技术,通过将光学观测与滤波处理或深度学习技术相结合,从单个光散射图像中估计玻璃基板中潜在缺陷的深度。通过激光加工在玻璃基板上引入缺陷,然后用光散射法在不同焦点处观察缺陷。利用这些观测数据建立了两种基于不同理论的缺陷深度预测模型。基于滤波技术的模型缺乏通用性;然而,它们的优点是易于理解和解释。相比之下,基于深度学习的模型具有很高的通用性,并且随着获取更多数据,具有提高准确性的潜力。我们的方法能够对潜在缺陷深度进行高度敏感和高效的分析,有助于提高半导体制造行业的精度和可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Internal defect depths prediction technique by combining light-scattering imaging and machine learning
Fine polishing is crucial for achieving nano-scale flatness in high-performance wafers. With increasing demand for high-precision processes, the emergence of latent flaws during polishing has become a significant challenge. Detecting latent flaws is crucial; however, acquiring precise depth information regarding these defects is equally essential to determine the appropriate removal allowance. This study focuses on developing a technique for estimating the depth of latent flaws in glass substrates from a single light-scattering image by integrating optical observations with either filter processing or deep learning techniques. Defects were introduced into a glass substrate through laser processing and then observed using the light-scattering method at various focal points. The data from these observations were used to develop two defect depth prediction models based on different theories. The models based on filtering techniques lack versatility; however, they offer the advantage of being straightforward to interpret and explain. In contrast, models based on deep learning exhibit high versatility and hold the potential for improved accuracy as additional data is acquired. Our approach enables highly sensitive and efficient analysis of latent flaw depths, contributing to improving precision and reliability in the semiconductor manufacturing industry.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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