热电冷却MWIR InAs/GaSb焦平面阵列的演示

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-04-19 DOI:10.1016/j.mssp.2025.109573

Agata Jasik, Krzysztof Czuba, Paweł Kozłowski, Iwona Sankowska, Marta Różycka, Maciej Fokt, Krzysztof Chmielewski, Ewa Papis-Polakowska, Adam Łaszcz, Joanna Branas, Krzysztof Hejduk, Krzysztof Bracha, Marek Wzorek, Adam Korczyc, Kazimierz Regiński

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引用次数: 0

摘要

研究了用于中波长红外光谱范围的热电冷却焦平面阵列（fpa）。采用干刻蚀法在引脚InAs/GaSb异质结构中形成了台面状像素。得到了分辨率为320 × 256，像素间距为30 μm的FPA。采用铟模键连接FPA和读出集成电路。热电冷却混合动力是密封在一个真空外壳与硅窗。利用FPA对不同温度下的热钎头图像进行检测。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Demonstration of thermoelectrically cooled MWIR InAs/GaSb focal plane arrays

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Demonstration of thermoelectrically cooled MWIR InAs/GaSb focal plane arrays

Thermoelectrically cooled focal plane arrays (FPAs) for the mid-wavelength infrared spectral range have been demonstrated. The mesa-shaped pixels were formed in pin InAs/GaSb heterostructure using dry etching. FPA with 320 × 256 resolution and a pixel pitch of 30 μm was obtained. Indium die-bonding was applied to connect FPA and a read-out integrated circuit. The thermoelectrically cooled hybrid was hermetically sealed in a vacuum housing with a silicon window. The pictures of the hot soldering tip were detected using FPA at different temperatures.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.