采用柔性氧化物TFT技术的低功耗全动态锁存比较器

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Vaishali Choudhary;Pydi Ganga Bahubalindruni
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引用次数: 0

摘要

本文介绍了一种新型的低功耗、全动态、锁存比较器,该比较器仅使用n型、单栅极非晶铟镓锌氧化物薄膜晶体管(a- igzo TFTs)在27~\mu $ m厚聚酰亚胺衬底上。该电路在输入信号频率为15khz、时钟频率为1mhz时表现出稳定的性能。通过采用伪cmos自举负载,它实现了约90%的输出电压摆幅,输入参考偏置电压和噪声电压分别为28 mV和14 mV。此外,它可以在$V_{\math {DD}}$ 4 V时可靠地检测最小差分输入电压为50 mV,而功耗仅为$8~ $ mu $ W。因此,这种设计非常适合通常需要低功耗的生物医学可穿戴设备。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Low-Power Fully Dynamic Latched Comparator Using Flexible Oxide TFT Technology
This letter presents a novel low-power, fully dynamic, latched comparator using only n-type, single-gate amorphous-indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) on a $27~\mu $ m thick polyimide substrate. This circuit demonstrates a stable performance up to an input signal frequency of 15 kHz with 1-MHz clock. By employing a pseudo-CMOS bootstrapped load, it achieved an output voltage swing of around 90%, an input-referred offset and noise voltages of 28 mV and 14 mV, respectively from measurements. In addition, it can reliably detect a minimum differential input voltage of 50 mV at a $V_{\mathrm { DD}}$ of 4 V, while consuming only $8~\mu $ W power. Therefore, this design is well-suited in biomedical wearable devices which typically needs low-power.
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来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
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