通过射频放大器应用的双栅极配置增强了AlGaN/GaN hemt的线性度

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-04-14 DOI:10.1016/j.sse.2025.109127

Haowen Guo , Wenbo Ye , Junmin Zhou , Yitian Gu , Han Gao , Xinbo Zou

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引用次数: 0

摘要

本研究研究了GaN双栅HEMT的射频线性性能，重点研究了其双音互调特性。双栅极配置通过将反馈电容降低到41.8 fF/mm来提高线性性能，与传统的单栅极hemt相比降低了73%。该双栅极器件在2.1 GHz时具有23.5 dB的小信号增益，无论直流栅极偏置电压VB如何，该增益都保持恒定。增加VB可以减轻互调失真，在VB为3 V和漏极电压为20 V时，器件的最高OIP3为30.1 dBm。此外，在VDS为5 V时，OIP3/PDC达到10.6 dB的峰值。双栅HEMT与传统单栅器件相比，增益提高3.7 dB，线性度提高5.9 dB。这些结果突出了双栅极结构的优势功率增益和高线性度，表明其在需要最小信号失真的射频放大器应用中具有相当大的潜力。

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Enhanced linearity of AlGaN/GaN HEMTs via dual-gate configuration for RF amplifier applications

This study investigates RF linearity performance of a GaN dual-gate HEMT, focusing on its two-tone intermodulation characteristics. The dual-gate configuration is implemented to enhance linearity performance by reducing feedback capacitance to 41.8 fF/mm, achieving a reduction of 73 % when compared to conventional single-gate HEMTs. The dual-gate device showcases a small-signal gain of 23.5 dB at 2.1 GHz, which remains constant regardless of DC gate bias voltage V_B. Intermodulation distortion could be mitigated by increasing V_B, as evidenced by device’s highest OIP3 of 30.1 dBm at V_B of 3 V and a drain voltage of 20 V. Additionally, the OIP3/P_DC reaches a peak value of 10.6 dB at V_DS of 5 V. A comparison between the dual-gate HEMT and a conventional single-gate device demonstrates a 3.7 dB gain increase of and a linearity improvement of 5.9 dB. These results highlight the advantageous power gain and high linearity of the dual-gate structure, indicating its considerable potential for RF amplifier applications that require minimum signal distortion.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.