离子注入诱导分层获得的独立膜的应力管理

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-04-02 DOI:10.1016/j.sse.2025.109120

L. Benichou , F. Mazen , T. Salvetat , F. Madeira , F. Rieutord

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引用次数: 0

摘要

研究了离子注入诱导分层获得的独立硅薄膜的应力管理。残余应力是通过轧制薄膜的曲率来测量的。通过适当的热退火工艺，我们可以有效地放松这种应力，便于薄膜的操纵和转移。测量结果表明，独立薄膜和供体硅片之间存在轻微的应力差异。独立膜的分层为Smart-Cut™技术在各种应用中开辟了新的可能性。

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Stress management in freestanding membranes obtained by ion implantation induced delamination

Stress management in freestanding silicon thin films obtained through ion implantation-induced delamination is investigated. Residual stress is measured through curvature of the rolled film. With a proper thermal annealing process, we can effectively relax this stress, facilitating the film manipulation and transfer. The measurements reveal a slight stress discrepancy between freestanding films and donor wafers which is discussed. The delamination of freestanding membranes opens up new possibilities for Smart-Cut™ technology on various applications.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.