铋钒氧化物作为串联光电化学电池的光阳极：挑战、策略和未来展望

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-04-07 DOI:10.1016/j.mssp.2025.109537

S.R. Sitaaraman, M. Karthikeyan

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引用次数: 0

摘要

串联光电化学电池是实现太阳能高效吸收和转化的有效途径。串联PEC电池可以作为太阳能制氢的自偏置电池。对采用钒酸铋（BiVO4）作为光阳极的光电化学水分解应用串联电池进行了全面的研究。研究了光吸收、电荷分离和表面反应等水分解的关键参数，以提高BiVO4的光电化学活性。各种器件拓扑和效率限制在串联电池进行了检查。研究了BiVO4在不同光电阴极下进行无辅助串联光电化学水分解的能力。最后，我们讨论了串联电池商业化的挑战和可行的选择。

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Bismuth vanadium oxide as photoanode in tandem photoelectrochemical (PEC) cells: Challenges, strategies and future prospects

Tandem photoelectrochemical (PEC) cell is an effective approach for efficient solar energy absorption and conversion. Tandem PEC cells can function as a self-biased for solar hydrogen production. A thorough examination of tandem cells for photoelectrochemical water splitting applications that employ bismuth vanadate (BiVO₄) as the photoanode is analysed. Key parameters of water splitting such as light absorption, charge separation, and surface reaction are all investigated as ways to improve the photoelectrochemical activity of BiVO₄. Various device topologies and efficiency limitations in tandem cells are examined. Ability of BiVO₄ to perform unassisted tandem photoelectrochemical water splitting with various photocathodes was also investigated. Finally, we discuss the challenges and feasible options for commercializing tandem cells.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.