Shuhan Wang , Zheng Zhou , Zili Tang , Jinghan Xu , Xiaoyan Liu , Xing Zhang
{"title":"一步变型包括条件变分自编码器的紧凑建模","authors":"Shuhan Wang , Zheng Zhou , Zili Tang , Jinghan Xu , Xiaoyan Liu , Xing Zhang","doi":"10.1016/j.sse.2025.109119","DOIUrl":null,"url":null,"abstract":"<div><div>Efficient and accurate variation modeling serves as a critical part in circuit evaluation, which can reproduce actual electrical behavior of semiconductor devices. Conventional variation modeling usually consists of two steps: compact modeling the basic electrical properties and sub-modeling the variation sources introduced in MOSFET manufacturing process, mostly structural and doping parameters. This lengthy process results in a gap between device production and rapid circuit analysis. In order to improve modeling efficiency, in this work, we propose a one-step variation-included compact modeling approach leveraging machine learning. Utilizing conditional variational autoencoder (cVAE), currents with variation are directly constructed without the sub-modeling step, as variation sources of the cVAE model are automatically extracted. Benchmark against prior distribution of dataset generated by Monte Carlo simulation of BSIM-CMG, normalized variation in figure of merits (FoMs) of cVAE generated I-V curves are all above 0.9. After implementing the model in SPICE, high accuracy in circuit-level variation modeling also indicates the potential of the proposed model.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"227 ","pages":"Article 109119"},"PeriodicalIF":1.4000,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"One-step variation included compact modeling with conditional variational autoencoder\",\"authors\":\"Shuhan Wang , Zheng Zhou , Zili Tang , Jinghan Xu , Xiaoyan Liu , Xing Zhang\",\"doi\":\"10.1016/j.sse.2025.109119\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Efficient and accurate variation modeling serves as a critical part in circuit evaluation, which can reproduce actual electrical behavior of semiconductor devices. Conventional variation modeling usually consists of two steps: compact modeling the basic electrical properties and sub-modeling the variation sources introduced in MOSFET manufacturing process, mostly structural and doping parameters. This lengthy process results in a gap between device production and rapid circuit analysis. In order to improve modeling efficiency, in this work, we propose a one-step variation-included compact modeling approach leveraging machine learning. Utilizing conditional variational autoencoder (cVAE), currents with variation are directly constructed without the sub-modeling step, as variation sources of the cVAE model are automatically extracted. Benchmark against prior distribution of dataset generated by Monte Carlo simulation of BSIM-CMG, normalized variation in figure of merits (FoMs) of cVAE generated I-V curves are all above 0.9. After implementing the model in SPICE, high accuracy in circuit-level variation modeling also indicates the potential of the proposed model.</div></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"227 \",\"pages\":\"Article 109119\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2025-04-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110125000644\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110125000644","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
One-step variation included compact modeling with conditional variational autoencoder
Efficient and accurate variation modeling serves as a critical part in circuit evaluation, which can reproduce actual electrical behavior of semiconductor devices. Conventional variation modeling usually consists of two steps: compact modeling the basic electrical properties and sub-modeling the variation sources introduced in MOSFET manufacturing process, mostly structural and doping parameters. This lengthy process results in a gap between device production and rapid circuit analysis. In order to improve modeling efficiency, in this work, we propose a one-step variation-included compact modeling approach leveraging machine learning. Utilizing conditional variational autoencoder (cVAE), currents with variation are directly constructed without the sub-modeling step, as variation sources of the cVAE model are automatically extracted. Benchmark against prior distribution of dataset generated by Monte Carlo simulation of BSIM-CMG, normalized variation in figure of merits (FoMs) of cVAE generated I-V curves are all above 0.9. After implementing the model in SPICE, high accuracy in circuit-level variation modeling also indicates the potential of the proposed model.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.