I. Clitenn , B. Noorul Ayin , T. Prakash , R. Ramesh Babu
{"title":"水助固相反应低温合成Cs2BaBr4微晶体用于低剂量x射线传感","authors":"I. Clitenn , B. Noorul Ayin , T. Prakash , R. Ramesh Babu","doi":"10.1016/j.mssp.2025.109528","DOIUrl":null,"url":null,"abstract":"<div><div>X-rays represent a significant milestone in medical science; however, it is crucial to monitor the amount of radiation absorbed by the human body. Repeated exposure to low-dose X-rays can pose severe health risks, including cancer. To develop an appropriate low-dose X-ray sensing material, we focused on cesium barium bromide (Cs<sub>2</sub>BaBr<sub>4</sub>), a ternary metal halide compound synthesized using the Water-Assisted Solid-State Reaction (WASSR) method. Previously, Cs<sub>2</sub>BaBr<sub>4</sub> had only been synthesized through the Bridgman method. In this study, we report for the first time the preparation of Cs<sub>2</sub>BaBr<sub>4</sub> microcrystals via the facile and cost-efficient WASSR method to investigate their low-dose X-ray sensing properties. Before coating the prepared microcrystals onto the BPW34 photodiode for X-ray sensing, we subjected them to various characterization studies, including Powder X-ray Diffraction, Thermogravimetric Analysis, Field Emission Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy, High Resolution-Transmission Electron Microscopy, Ultraviolet-Diffuse Reflectance Spectroscopy, and Photoluminescence. Finally, we coated the synthesized Cs<sub>2</sub>BaBr<sub>4</sub> microcrystals with oleic acid (OA) and oleylamine (OAm) on the BPW34 photodiode and examined their X-ray-induced photocurrent characteristics. Using OA and OAm as surfactants in different ratios yielded improved results for studying the low-dose X-ray sensing properties.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":""},"PeriodicalIF":4.2000,"publicationDate":"2025-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low-temperature synthesis of Cs2BaBr4 microcrystals via Water-Assisted Solid-State Reaction for low-dose X-ray sensing\",\"authors\":\"I. Clitenn , B. Noorul Ayin , T. Prakash , R. Ramesh Babu\",\"doi\":\"10.1016/j.mssp.2025.109528\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>X-rays represent a significant milestone in medical science; however, it is crucial to monitor the amount of radiation absorbed by the human body. Repeated exposure to low-dose X-rays can pose severe health risks, including cancer. To develop an appropriate low-dose X-ray sensing material, we focused on cesium barium bromide (Cs<sub>2</sub>BaBr<sub>4</sub>), a ternary metal halide compound synthesized using the Water-Assisted Solid-State Reaction (WASSR) method. Previously, Cs<sub>2</sub>BaBr<sub>4</sub> had only been synthesized through the Bridgman method. In this study, we report for the first time the preparation of Cs<sub>2</sub>BaBr<sub>4</sub> microcrystals via the facile and cost-efficient WASSR method to investigate their low-dose X-ray sensing properties. Before coating the prepared microcrystals onto the BPW34 photodiode for X-ray sensing, we subjected them to various characterization studies, including Powder X-ray Diffraction, Thermogravimetric Analysis, Field Emission Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy, High Resolution-Transmission Electron Microscopy, Ultraviolet-Diffuse Reflectance Spectroscopy, and Photoluminescence. Finally, we coated the synthesized Cs<sub>2</sub>BaBr<sub>4</sub> microcrystals with oleic acid (OA) and oleylamine (OAm) on the BPW34 photodiode and examined their X-ray-induced photocurrent characteristics. Using OA and OAm as surfactants in different ratios yielded improved results for studying the low-dose X-ray sensing properties.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"194 \",\"pages\":\"\"},\"PeriodicalIF\":4.2000,\"publicationDate\":\"2025-04-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800125002653\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125002653","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Low-temperature synthesis of Cs2BaBr4 microcrystals via Water-Assisted Solid-State Reaction for low-dose X-ray sensing
X-rays represent a significant milestone in medical science; however, it is crucial to monitor the amount of radiation absorbed by the human body. Repeated exposure to low-dose X-rays can pose severe health risks, including cancer. To develop an appropriate low-dose X-ray sensing material, we focused on cesium barium bromide (Cs2BaBr4), a ternary metal halide compound synthesized using the Water-Assisted Solid-State Reaction (WASSR) method. Previously, Cs2BaBr4 had only been synthesized through the Bridgman method. In this study, we report for the first time the preparation of Cs2BaBr4 microcrystals via the facile and cost-efficient WASSR method to investigate their low-dose X-ray sensing properties. Before coating the prepared microcrystals onto the BPW34 photodiode for X-ray sensing, we subjected them to various characterization studies, including Powder X-ray Diffraction, Thermogravimetric Analysis, Field Emission Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy, High Resolution-Transmission Electron Microscopy, Ultraviolet-Diffuse Reflectance Spectroscopy, and Photoluminescence. Finally, we coated the synthesized Cs2BaBr4 microcrystals with oleic acid (OA) and oleylamine (OAm) on the BPW34 photodiode and examined their X-ray-induced photocurrent characteristics. Using OA and OAm as surfactants in different ratios yielded improved results for studying the low-dose X-ray sensing properties.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.