构建Bi/ bibr - bi4o5i2异质结增强光吸收和电荷分离，高效降解双酚A

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-04-03 DOI:10.1016/j.mssp.2025.109543

Shuang Fu , Jinyuan Zhang , Junhao Ma , Qincan Ma , Xianzhong Lin , Yueli Zhang

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引用次数: 0

摘要

如何实现太阳能的高效利用和光生电荷的分离能力，是利用氧化卤化铋光催化降解领域亟待解决的问题。本文成功地设计和构建了Bi/ bibr - bi4o5i2 （BOB-BI）异质结。优化后的1BOB-1BI异质结在模拟太阳光照（25 min）下实现了100%的BPA降解率。这种优异的光催化能力归因于Bi粒子的协同作用和异质结的形成。铋粒子的局部表面等离子体共振（LSPR）效应显著改善了光催化剂的光吸收。异质结的构建有效地降低了界面转移阻力，增强了光生电荷的分离能力。本研究为构建有效的铋基异质结光催化剂提供了深入的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Enhancement of light absorption and charge separation through construction of Bi/BiOBr-Bi4O5I2 heterojunction for efficient degradation of bisphenol A

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Enhancement of light absorption and charge separation through construction of Bi/BiOBr-Bi4O5I2 heterojunction for efficient degradation of bisphenol A

How to realize the efficient utilization of the solar energy and the separation capacity of photo-generated charges is an instant problem in the field of photocatalytic degradation utilizing bismuth oxyhalide. Here, Bi/BiOBr-Bi₄O₅I₂ (BOB-BI) heterojunctions have been successfully designed and constructed. The optimized 1BOB-1BI heterojunction achieves a 100 % degradation rate of BPA under simulated solar light illumination (25 min). This excellent photocatalytic ability is ascribable to the synergistic effect of Bi particles and the formation of heterojunction. The significantly improved light absorption of the photocatalyst was benefited by the localized surface plasmon resonance (LSPR) effect of Bi particles. The construction of the heterojunction effectively reduces the interfacial transfer resistance, enhancing the separation capacity of photo-generated charges. This research provides a deep insight to the construction of effective bismuth-based heterojunction photocatalysts.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.