N. Boudghene Stambouli , M. Ould-Mohamed , T. Ouahrani
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Thermoelectric properties of asymmetric low-dimensional Pt2ClF from ab initio calculation
Finding thermoelectric materials with high figures of merit is a significant and ongoing research topic. A testbed of intriguing structures is made up of the candidate materials with low dimensional structures. In this study, we investigate the thermoelectric properties of low-dimensional Pt2Cl2 and Pt2ClF structures using first-principles calculations based on Density Functional Theory (DFT). Anharmonic effects, phonon transport properties, and lattice thermal conductivity were thoroughly analyzed. The results indicate that the asymmetric Pt2ClF structure exhibits significantly stronger anharmonicity compared to its symmetric counterpart, Pt2Cl2. This enhanced anharmonicity arises from the asymmetry introduced by fluorine substitution, which increases phonon–phonon scattering and reduces the lattice’s thermal conductivity. This makes the figure of merit higher for Pt2ClF. These findings suggest that the asymmetric Pt2ClF structure, with its enhanced phonon scattering mechanisms and suppressed lattice thermal conductivity, is a promising material for high-temperature thermoelectric applications.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.