Fabrication and characterization of structural, morphology and electrical properties of thermally deposited quinacridone thin films

In this paper, we have systematically reported on fabrication and characterization of structural, morphology and electrical properties of thermally deposited Quinacridone (QA) thin films through controlling the substrate temperature. By the detailed X-ray diffraction and atomic force microscopy analysis, QA thin films were crystallized at a substrate temperature of 80 °C or higher. At the substate temperature of 180 °C, highly ordering β phase QA thin films could be deposited with the largest gain size of ca. 232 nm and the maximum mobility of 2.95 × 10^–2 cm² /V s can be obtained. Thus, the grain sizes and phase selecting growth of the QA thin films could be controlled by the substrate temperature.