350 V GaN hemt在重离子辐照下的行为

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-04-01 DOI:10.1016/j.microrel.2025.115723

F. Velardi , G. Canale Parola , S. Palazzo , E. Martano , A. Sanseverino , L. Silvestrin , C. Abbate , G. Busatto

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引用次数: 0

摘要

介绍了350 V增强模式GaN功率HEMT在重离子辐照下的行为。为了提高测量的灵敏度，设计了一种新的实验装置。它允许在高能粒子撞击后在终端收集的电荷的测量几乎延长了一个数量级。得到的结果，在二维有限元模拟的帮助下解释，表明测试设备表现出与以前表征的非常不同的行为。它们不会显示出明显的电荷放大，也不会受到单事件栅极破裂的影响。此外，还证明了器件失效是由于类似于硅PiN二极管暴露于重离子辐照时所产生的递归机制。

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The behaviour of 350 V GaN HEMTs during heavy ion irradiations

The behaviour of a 350 V Enhancement Mode GaN power HEMT during heavy ion irradiation is presented. A new experimental setup has been developed to increase the sensitivity of the measurement. It allowed the measurement of the charge collected at the terminals following the impact with energetic particles to be extended by almost an order of magnitude. The results obtained, interpreted with the help of two-dimensional finite element simulations, demonstrate that the tested devices exhibit very different behaviour from those previously characterized. They do not show significant charge amplification and are not subjected to single-event gate rupture. Furthermore, it is demonstrated that the device failure is due to a recursive mechanism like that which develops in silicon PiN diodes when exposed to heavy ion irradiation.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.