WO3-WS2复合材料的合成及光敏制氢

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Miaomiao Xue, Mingcai Yin, Dehang Ma, Jiaming Zhang, Luyao Ling, Yaoting Fan
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引用次数: 0

摘要

WO3是最有潜力的光催化剂之一。但由于其还原能力较差,要实现光催化制氢,还需要与WS2结合等改性。为了找出WO3与WS2的最佳配比,本文采用简单的两步煅烧法制备了一系列WO3-WS2复合材料,并在红素B钠盐(EB)敏化下研究了其光催化氢性能。结果表明,当WS2与WO3的质量比大于等于5:5时,可以实现高效析氢。此外,还对制备前驱体WO3的煅烧条件和WO3- ws2复合材料的制备方法进行了优化。制备的WO3-WS2具有较好的稳定性,并且在引入CdS后,可以实现相对稳定的产氢。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis and photosensitized hydrogen production of WO3-WS2 composite
WO3 is one of the most potential photocatalysts. However, to realize its photocatalytic hydrogen production, modification such as combining with WS2 is necessary due to its poor reduction capacity. To find out the optimal ratio between WO3 and WS2, in this paper, a facile two-step calcination method was used for the preparation of a series of WO3-WS2 composites, and their photocatalytic hydrogen performances were investigated under Erythrosine B sodium salt (EB) sensitization. The results showed that when the mass ratio of WS2 to WO3 is 5:5 or higher, efficient hydrogen evolution comes true. In addition, the calcination condition for the preparation of precursor WO3 and the method for the preparation of WO3-WS2 composite were optimized. The as-prepared WO3-WS2 exhibits relatively good stability and relatively stable hydrogen generation was achieved when CdS was introduced.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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