Kai Li , Xijie Dong , Keliang Pan , Hang Zhang , Jian Yang
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引用次数: 0
摘要
通过外延生长构建紧密结合且高度分散的异质界面是提高复合系统光催化性能的一种有前途的策略。本研究通过酸蒸气离子交换法制备了三维(3D)分层花状 BiOBr/Bi2S3 异质结。高度匹配的晶格参数促进了 BiOBr 衬底通过外延生长转化为 Bi2S3,而气固界面相对温和的反应条件则有效地保留了衬底的初始形态结构。由于扩大了光谱响应范围,提高了光生载流子的分离和迁移效率,并通过分层结构内的复杂散射提高了光利用率,BiOBr/Bi2S3 异质结在降解罗丹明 B 和盐酸四环素以及还原六价铬方面表现出了卓越的光催化活性。这种策略不仅为拓扑异质结的构建提供了一种新方法,而且作为一种通用方法具有巨大的潜力,为研究和实际应用提供了广阔的前景。
Facile synthesis of BiOBr/Bi2S3 topological heterojunction through acid vapor ion exchange and efficient application in environmental photocatalysis
Constructing tightly bound and highly dispersed heterointerfaces through epitaxial growth is a promising strategy for enhancing the photocatalytic performance of composite systems. In this study, a three-dimensional (3D) hierarchical flower-like BiOBr/Bi2S3 heterojunction was fabricated via an acid vapor ion exchange method. The highly matched lattice parameters facilitated the transformation of the BiOBr substrate into Bi2S3 through epitaxial growth, while the relatively mild reaction conditions at the gas-solid interface effectively preserved the initial morphological structure of the substrate. Benefiting from the expanded spectral response range, enhanced separation and migration efficiency of photogenerated carriers, and improved light utilization through complex scattering within the hierarchical structures, the BiOBr/Bi2S3 heterojunctions demonstrated exceptional photocatalytic activity in the degradation of Rhodamine B and Tetracycline Hydrochloride, as well as in the reduction of Cr(VI). This strategy not only provides a novel approach for the construction of topological heterojunctions but also holds significant potential as a universal methodology, offering broad prospects for both research and practical applications.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.