IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Haibo Jiang , Kaina Yang , Shenyang Cao , Shengwei Yu , Xue Sun , Shengqiu Shou , Jianhua Shen
{"title":"In-situ oxidation of CoOOH decorated on P25 heterostructure as the co-catalyst for enhanced photodegradation of organic pollutants","authors":"Haibo Jiang ,&nbsp;Kaina Yang ,&nbsp;Shenyang Cao ,&nbsp;Shengwei Yu ,&nbsp;Xue Sun ,&nbsp;Shengqiu Shou ,&nbsp;Jianhua Shen","doi":"10.1016/j.mssp.2025.109522","DOIUrl":null,"url":null,"abstract":"<div><div>Surface modification of nanoscale titanium dioxide (P25) for photocatalysts can improve carrier separation efficiency by constructing heterojunction structures and reduce reaction energy barriers by introducing co-catalysts. This study describes the successful deposition of CoOOH particles on the P25 surface using solvent-based and in-situ oxidation methods, resulting in a type II P25-CoOOH heterostructure. The photocurrent of P25-CoOOH exhibited a 630 % increase compared to pure P25, while showing a reduced surface potential barrier of 2.21 eV. Density functional theory (DFT) simulations demonstrated that the work function of the CoOOH (001) surface (Φ = 6.639 eV) is significantly lower than that of P25 (101) (Φ = 7.238 eV). Photoluminescence (PL) spectra and active species trapping experiments demonstrated a slower rate of electron and hole recombination in P25-CoOOH compared to pure P25, which effectively reduces electron-hole pair recombination and significantly enhances its photocatalytic activity for degrading methylene blue (MB) by 2.07 times that of P25. These findings suggest that CoOOH not only forms a heterojunction with P25 to improve carrier separation efficiency but also serves as a co-catalyst, increasing the number of active sites on the surface.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"193 ","pages":"Article 109522"},"PeriodicalIF":4.2000,"publicationDate":"2025-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125002598","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

对用于光催化剂的纳米级二氧化钛(P25)进行表面改性,可通过构建异质结结构提高载流子分离效率,并通过引入助催化剂降低反应能垒。本研究介绍了利用溶剂法和原位氧化法在 P25 表面成功沉积 CoOOH 粒子,从而获得了 II 型 P25-CoOOH 异质结构。与纯 P25 相比,P25-CoOOH 的光电流增加了 630%,同时表面势垒降低了 2.21 eV。密度泛函理论(DFT)模拟表明,CoOOH (001) 表面的功函数(Φ = 6.639 eV)明显低于 P25 (101) 的功函数(Φ = 7.238 eV)。光致发光(PL)光谱和活性物种捕获实验表明,与纯 P25 相比,P25-CoOOOH 中的电子和空穴重组速度更慢,这有效地减少了电子-空穴对重组,使其降解亚甲基蓝(MB)的光催化活性显著提高,是 P25 的 2.07 倍。这些发现表明,CoOOH 不仅能与 P25 形成异质结,提高载流子分离效率,还能作为助催化剂,增加表面活性位点的数量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

In-situ oxidation of CoOOH decorated on P25 heterostructure as the co-catalyst for enhanced photodegradation of organic pollutants

In-situ oxidation of CoOOH decorated on P25 heterostructure as the co-catalyst for enhanced photodegradation of organic pollutants
Surface modification of nanoscale titanium dioxide (P25) for photocatalysts can improve carrier separation efficiency by constructing heterojunction structures and reduce reaction energy barriers by introducing co-catalysts. This study describes the successful deposition of CoOOH particles on the P25 surface using solvent-based and in-situ oxidation methods, resulting in a type II P25-CoOOH heterostructure. The photocurrent of P25-CoOOH exhibited a 630 % increase compared to pure P25, while showing a reduced surface potential barrier of 2.21 eV. Density functional theory (DFT) simulations demonstrated that the work function of the CoOOH (001) surface (Φ = 6.639 eV) is significantly lower than that of P25 (101) (Φ = 7.238 eV). Photoluminescence (PL) spectra and active species trapping experiments demonstrated a slower rate of electron and hole recombination in P25-CoOOH compared to pure P25, which effectively reduces electron-hole pair recombination and significantly enhances its photocatalytic activity for degrading methylene blue (MB) by 2.07 times that of P25. These findings suggest that CoOOH not only forms a heterojunction with P25 to improve carrier separation efficiency but also serves as a co-catalyst, increasing the number of active sites on the surface.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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