一种用于二硫化钼薄膜表面缺陷快速准确检测的轻量级模型和代理框架

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Ruiliang Zhou , Jian Yang , Hailong Liu , Chen Xu , Yan Pu , Ivan S. Babichuk
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引用次数: 0

摘要

二维(2D)材料,特别是过渡金属二硫族化合物(TMDs),由于其独特的性能,在光电子学和储能方面显示出巨大的潜力。然而,杂质和空隙等缺陷会显著影响其电子、光学和磁特性。传统的缺陷检测方法,如扫描透射电子显微镜(STEM),耗时且可扩展性有限。该研究引入了DeepMGD,这是一种新的深度学习模型,旨在高效准确地检测通过化学气相沉积(CVD)制备的二硫化钼(MoS2)薄膜的缺陷,并使用光学显微镜成像。DeepMGD使用MobileNetV4作为主干,Gold-YOLO作为颈部,以及解耦的头部。该架构在具有挑战性的照明条件下获得0.894的mAP@50,同时保持512.9万的精益参数计数,在GPU上实现122.2 FPS,在CPU上实现3.0 FPS。此外,我们提出了DeepMGD代理,这是一个智能系统框架,将DeepMGD模型与大型语言模型(LLM)和Python解释器集成在一起。这个框架自动化了缺陷检测和分析,为用户提供了一个直观的工作流程。系统处理微观图像和用户命令来检测缺陷并生成自然语言解释,实现无缝缺陷检测和定量分析。这项工作为分析二维材料提供了一种可靠而有效的方法,在未来的其他类似材料中具有潜在的应用前景。该代码发布在https://github.com/zhouruiliangxian/DeepMGD。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

A lightweight model and agent framework for fast and accurate surface defect detection in MoS2 films

A lightweight model and agent framework for fast and accurate surface defect detection in MoS2 films
Two-dimensional (2D) materials, particularly transition metal dichalcogenides (TMDs), have shown great potential in optoelectronics and energy storage due to their unique properties. However, defects such as impurities and voids can significantly impact their electronic, optical, and magnetic characteristics. Traditional defect detection methods, such as scanning transmission electron microscopy (STEM), are time-consuming and limited in scalability. This study introduces DeepMGD, a novel deep learning model designed for efficient and accurate defect detection in molybdenum disulfide (MoS2) films fabricated via chemical vapor deposition (CVD) and imaged using optical microscopy. DeepMGD utilizes MobileNetV4 as its backbone, Gold-YOLO as the neck, and a decoupled head. The architecture attains a competitive mAP@50 of 0.894 under challenging illumination conditions while maintaining a lean parameter count of 5.129 million, achieving 122.2 FPS on a GPU and 3.0 FPS on a CPU. Additionally, we present the DeepMGD Agent, an intelligent system framework that integrates the DeepMGD model with a large language model (LLM) and a Python interpreter. This framework automates defect detection and analysis, offering an intuitive workflow for users. The system processes microscopic images and user commands to detect defects and generate natural language explanations, enabling seamless defect detection and quantitative analysis. This work provides a reliable and efficient approach for analyzing 2D materials, with potential applications for other similar materials in the future. The code is released at https://github.com/zhouruiliangxian/DeepMGD.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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