Yuri Hamayano Lopes Ribeiro , Jime de Souza Sampaio , Vagner Oliveira Santos , Denis Gilbert Francis David , Marcus Vinicius Santos da Silva , Tenilson Souza da Silva , Tercio Neres dos Santos , Jailton Souza de Almeida
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引用次数: 0
摘要
掺杂金属的氧化锡(SnO2)是氧化物基稀释磁性半导体的理想材料,具有显著的光学和导电特性。本研究的重点是二氧化锡薄膜,包括未掺杂和掺杂钴(Co)或镍(Ni)的二氧化锡薄膜,这些薄膜是通过喷雾热解合成的,喷雾热解是一种简单、经济高效且用途广泛的技术,广泛应用于传感器和光伏设备的制造。这些样品在成分、形态、结晶度、光学特性、导电性和磁性等方面都具有特征。未掺杂的二氧化锡薄膜的电阻率约为 10-2 Ωcm,并表现出因氧空位而产生的软铁磁性。相比之下,掺镍和掺钴样品的晶体结构和电特性发生了显著变化,显示出 n 型载流子行为。掺杂剂的加入增强了室温软铁磁性,降低了透光率,并伴随着带隙能的变化。密度泛函理论计算为解释实验结果(包括氯等不可避免的杂质的影响)提供了理论基础。这些发现强调了掺金属二氧化锡薄膜在自旋电子学和光电子学先进应用中的潜力。
Magnetic properties of (Ni, Co)-doped tin oxide thin films
Metal-doped tin oxide (SnO) is an auspicious material for oxide-based diluted magnetic semiconductors, exhibiting remarkable optical and conductive properties. This study focuses on SnO thin films, both undoped and doped with Cobalt (Co) or Nickel (Ni), synthesized via spray pyrolysis — a simple, cost-effective, and versatile technique widely utilized in the fabrication of sensors and photovoltaic devices. The samples have been characterized in terms of their composition, morphology, crystallinity, optical properties, electrical conductivity, and magnetic behavior. The undoped SnO films demonstrated a resistivity of approximately 10−2 cm and exhibited soft ferromagnetic behavior attributed to oxygen vacancies. In contrast, the Ni- and Co-doped samples showed significant alterations in their crystalline structure and electrical properties, displaying n-type carrier behavior. The incorporation of dopants enhanced the room-temperature soft ferromagnetism and led to a reduction in optical transmittance, accompanied by shifts in the bandgap energy. Density Functional Theory calculations provided a theoretical foundation for interpreting the experimental results, including the influence of unavoidable impurities like Chlorine. These findings underscore the potential of metal-doped SnO thin films for advanced applications in spintronics and optoelectronics.
期刊介绍:
Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications. The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of scientific endeavor.