具有增强热电性能的钛取代四面体的结构、亚结构、磁性和电学性质

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Oleksandr Dobrozhan , Roman Pshenychnyi , Maksym Yermakov , Bohdan Boiko , Serhii Vorobiov , Vladimír Tkáč , Anatoliy Opanasyuk
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引用次数: 0

摘要

本研究证明了在Cu12−xTixSb4S13四面体固溶体中以钛(Ti)代替铜(Cu)对其结构、亚结构、磁性和热电(TE)性能的影响。采用后向退火、压制和烧结工艺,采用低成本、可扩展的多元醇法合成了标称Ti取代含量为x = 0.0、0.3、0.5、1.0和1.5的四面体材料。x射线衍射分析和拉曼光谱证实,固溶体含有尺寸在~ 60 ~ ~ 65 nm之间的纳米晶体,具有单一的四面体相。在Cu位点上替换Ti会引起晶格参数、单元胞体积、相干散射域以及大变形、大应力和位错水平的复杂变化。此外,观察到四面体的结晶质量取决于钛取代含量。扫描电镜和能量色散x射线分析表明,四面体由尺寸在~ 70 ~ ~ 200 nm之间的颗粒组成,组成元素分布均匀,接近化学计量组成。由于Ti4+取代Cu1+/Cu2+位点导致空穴浓度降低,Ti取代降低了电导率,增加了塞贝克系数。随着Ti含量的增加,功率因数略有降低;然而,与纯四面体相比,电子导热系数明显降低了两倍。此外,还确定了四面体的磁性参数,以评估态电子密度的变化。本研究为制备低成本、高效的基于环境友好且地球资源丰富的钛取代四面体的TE材料提供了一种实用的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural, substructural, magnetic, and electrical properties of Ti-substituted tetrahedrites with enhanced thermoelectric performance
This study demonstrates the effect of substituting titanium (Ti) in place of copper (Cu) in Cu12−xTixSb4S13 tetrahedrite solid solutions on their structural, substructural, magnetic, and thermoelectric (TE) properties. Tetrahedrite materials with a nominal Ti substitution content of x = 0.0, 0.3, 0.5, 1.0, and 1.5 are synthesized via a low-cost and scalable polyol method using posterior annealing, pressing, and sintering treatments. X-ray diffraction analysis and Raman spectroscopy confirm that the solid solutions contain nanocrystallites with sizes ranging from ∼60 to ∼65 nm, which possess a single tetrahedrite phase. The replacement of Ti at Cu sites induces convoluted changes in the lattice parameter, unit cell volume, coherent scattering domains, and levels of macrodeformations, macrostresses, and dislocations. Moreover, the crystalline quality of the tetrahedrites is observed to depend on Ti substitution content. Scanning electron microscopy and energy-dispersive X-ray analysis indicate that the tetrahedrites comprise grains with sizes ranging from ∼70 to ∼200 nm with homogeneous distribution of constituent elements and closeness to stoichiometric composition. Ti substitution decreases the electrical conductivity and increases Seebeck coefficient because of hole concentration reduction caused by Ti4+ substitution at Cu1+/Cu2+ sites. The power factor slightly decreases with increased Ti content; however, electronic thermal conductivity notably reduces by two times in comparison to pure tetrahedrite. Furthermore, magnetic parameters of the tetrahedrites are identified to assess the change in the electronic density of states. This study provides a practical approach for the fabrication of low-cost and efficient TE materials based on environmentally benign and earth-abundant Ti-substituted tetrahedrites.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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